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参数资料
| 型号： | SPP80N06S2L-06 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS Power-Transistor |
| 中文描述： | 的OptiMOS功率晶体管 |
| 文件页数： | 8/8页 |
| 文件大小： | 415K |
| 代理商： | SPP80N06S2L-06 |
2003-05-09
Page 8
SPI80N06S2L-05
SPP80N06S2L-05,SPB80N06S2L-05
Published by
Infineon Technologies AG
,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Further information
Please notice that the part number is
B
SPP80N06S2L-05 and
B
SPB80N06S2L-05, for simplicity the device is referred
to by the term SPP80N06S2L-05 and SPB80N06S2L-05 throughout this documentation.
相关PDF资料 |
PDF描述 |
|---|---|
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| SPP80N06S2L-11 | OptiMOS Power-Transistor |
| SPP80N06S2L-H5 | OptiMOS Power-Transistor |
| SPL081A | Low Voltage 7KB LCD Controller |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SPP80N06S2L-07 | 功能描述:MOSFET N-CH 55V 80A TO-220 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:OptiMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| SPP80N06S2L-07 | 制造商:Infineon Technologies AG 功能描述:MOSFET N LOGIC TO-220 |
| SPP80N06S2L07NK | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220AB |
| SPP80N06S2L-09 | 功能描述:MOSFET N-CH 55V 80A TO-220 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:OptiMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| SPP80N06S2L09NK | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220AB |
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