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| 型号： | SQ7414EN-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 5.6A PPAK 1212-8 |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 8.7A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 10V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? 1212-8 |
| 供应商设备封装： | PowerPAK? 1212-8 |
| 包装： | 带卷 (TR) |
SQ7414EN
www.vishay.com
SPECIFICATIONS (T C = 25 °C, unless otherwise noted)
Vishay Siliconix
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V DS
V GS(th)
I GSS
V GS = 0 V, I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
V GS = 0 V
V DS = 60 V
60
1.5
-
-
-
-
-
-
-
2.5
± 100
1
V
nA
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V
V DS = 60 V, T J = 55 °C
-
-
5
μA
V GS = 0 V
V DS = 60 V, T J = 175 °C
-
-
150
On-State Drain Current a
I D(on)
V GS = 10 V
V DS ??? 5 V
30
-
-
A
V GS = 10 V
I D = 8.7 A
-
0.021
0.025
Drain-Source On-State Resistance a
R DS(on)
V GS = 10 V
V GS = 10 V
I D = 8.7 A, T J = 125 °C
I D = 8.7 A, T J = 175 °C
-
-
-
-
0.049
0.061
?
V GS = 4.5 V
I D = 7.3 A
-
0.030
0.036
Forward Transconductance a
g fs
V DS = 15 V, I D = 8.7 A
-
18
-
S
Dynamic b
Input Capacitance
C iss
-
740
925
Output Capacitance
C oss
V GS = 0 V
V DS = 25 V, f = 1 MHz
-
140
175
pF
Reverse Transfer Capacitance
Total Gate Charge c
C rss
Q g
-
-
50
16
63
25
Gate-Source Charge c
Charge c
Gate-Drain
Gate Resistance
Time c
Turn-On Delay
Q gs
Q gd
R g
t d(on)
V GS = 10 V
V DS = 30 V, I D = 8.7 A
f = 1 MHz
-
-
0.2
-
2.7
4.4
1
15
-
-
1.8
25
nC
?
Rise Time c
Turn-Off Delay Time c
Fall Time c
t r
t d(off)
t f
V DD = 30 V, R L = 30 ?
I D ? 1 A, V GEN = 10 V, R g = 6 ?
-
-
-
12
30
12
20
50
20
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a
I SM
-
-
30
A
Forward Voltage
Reverse Recovery Time
V SD
t rr
I F = 85 A, V GS = 0 V
I F = 3.2 A, dI/dt = 100 A/μs
-
-
-
45
1.2
90
V
ns
Notes
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature. ?
?
?
?
?
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability. ?
S13-1462-Rev. E, 01-Jul-13
2
Document Number: 74489
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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