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| 型号： | SQJ469EP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 80V 32A PPAK 8SOIC |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 80V |
| 电流 - 连续漏极(Id) @ 25° C： | 32A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 10.2A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 155nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5100pF @ 40V |
| 功率 - 最大： | 100W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? SO-8 |
| 包装： | 带卷 (TR) |
SQJ469EP
www.vishay.com
SPECIFICATIONS (T C = 25 °C, unless otherwise noted)
Vishay Siliconix
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V DS
V GS(th)
I GSS
V GS = 0, I D = - 250 μA
V DS = V GS , I D = - 250 μA
V DS = 0 V, V GS = ± 20 V
V GS = 0 V
V DS = - 80 V
- 80
- 1.5
-
-
-
- 2.0
-
-
-
- 2.5
± 100
-1
V
nA
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V
V DS = - 80 V, T J = 125 °C
-
-
- 50
μA
V GS = 0 V
V DS = - 80 V, T J = 175 °C
-
-
- 150
On-State Drain Current a
I D(on)
V GS = - 10 V
V DS = -5 V
- 30
-
-
A
V GS = - 10 V
I D = - 10.2 A
-
0.021
0.025
Drain-Source On-State Resistance a
R DS(on)
V GS = - 10 V
V GS = - 10 V
T J = 125 °C
T J = 175 °C
-
-
0.036
0.045
0.043
0.054
Ω
V GS = - 6 V
I D = - 8.1 A
-
0.024
0.029
Forward
Transconductance b
g fs
V DS = - 15 V, I D = - 10.2 A
-
35
-
S
Dynamic b
Input Capacitance
C iss
-
4250
5100
Output Capacitance
C oss
V GS = 0 V
V DS = - 40 V, f = 1 MHz
-
250
300
pF
Reverse Transfer Capacitance
Total Gate Charge c
C rss
Q g
-
-
215
101
260
155
Gate-Source Charge c
Q gs
V GS = - 10 V
V DS = - 40 V, I D = - 10.2 A
-
13
-
nC
Gate-Drain Charge c
Q gd
-
21
-
Gate Resistance
Turn-On Delay Time c
Rise Time c
Turn-Off Delay Time c
Fall Time c
R g
t d(on)
t r
t d(off)
t f
f = 1 MHz
V DD = - 40 V, R L = 4.9 Ω
I D ? - 8.1 A, V GEN = - 10 V, R g = 1 Ω
1.8
-
-
-
-
3.2
16
16
150
40
4.6
20
20
180
50
Ω
ns
Source-Drain Diode Ratings and
Characteristics b
Pulsed Current a
I SM
-
-
- 128
A
Forward Voltage
V SD
I F = - 8.1 A, V GS = 0
-
- 0.8
- 1.2
V
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2288-Rev. B, 28-Nov-11
2
Document Number: 65936
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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