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参数资料
| 型号： | SST25VF016B-50-4I-QAF |
| 厂商： | Microchip Technology |
| 文件页数： | 11/32页 |
| 文件大小： | 0K |
| 描述： | IC FLASH SER 16M 50MHZ SPI 8WSON |
| 标准包装： | 98 |
| 系列： | SST25 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 16M（2M x 8） |
| 速度： | 50MHz |
| 接口： | SPI 串行 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-WSON |
| 供应商设备封装： | 8-WSON |
| 包装： | 管件 |
| 产品目录页面： | 1452 (CN2011-ZH PDF) |
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16 Mbit SPI Serial Flash
A Microchip Technology Company
SST25VF016B
Data Sheet
High-Speed-Read (80 MHz)
The High-Speed-Read instruction supporting up to 80 MHz Read is initiated by executing an 8-bit com-
mand, 0BH, followed by address bits [A 23 -A 0 ] and a dummy byte. CE# must remain active low for the
duration of the High-Speed-Read cycle. See Figure 6 for the High-Speed-Read sequence.
Following a dummy cycle, the High-Speed-Read instruction outputs the data starting from the speci-
fied address location. The data output stream is continuous through all addresses until terminated by a
low to high transition on CE#. The internal address pointer will automatically increment until the high-
est memory address is reached. Once the highest memory address is reached, the address pointer
will automatically increment to the beginning (wrap-around) of the address space. Once the data from
address location 1FFFFFH has been read, the next output will be from address location 000000H.
CE#
MODE 3
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
47 48
55 56
63 64
71 72
80
SCK MODE 0
SI
0B
ADD.
ADD.
ADD.
X
MSB
MSB
SO
HIGH IMPEDANCE
N
D OUT
N+1
D OUT
N+2
D OUT
N+3
D OUT
N+4
D OUT
Note: X = Dummy Byte: 8 Clocks Input Dummy Cycle (V IL or V IH )
MSB
1271 HSRdSeq.0
Figure 6: High-Speed-Read Sequence
Byte-Program
The Byte-Program instruction programs the bits in the selected byte to the desired data. The selected
byte must be in the erased state (FFH) when initiating a Program operation. A Byte-Program instruction
applied to a protected memory area will be ignored.
Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain
active low for the duration of the Byte-Program instruction. The Byte-Program instruction is initiated by
executing an 8-bit command, 02H, followed by address bits [A 23 -A 0 ]. Following the address, the data is
input in order from MSB (bit 7) to LSB (bit 0). CE# must be driven high before the instruction is exe-
cuted. The user may poll the Busy bit in the software status register or wait T BP for the completion of
the internal self-timed Byte-Program operation. See Figure 7 for the Byte-Program sequence.
CE#
MODE 3
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39
SCK
MODE 0
SI
MSB
02
ADD.
MSB
ADD.
ADD.
D IN
MSB
LSB
SO
HIGH IMPEDANCE
1271 ByteProg.0
Figure 7: Byte-Program Sequence
?2011 Silicon Storage Technology, Inc.
11
DS25044A
08/11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST25VF016B-50-4I-QAF OLD SST P/N | 功能描述:闪存 16M (2Mx8) 50MHz 2.7-3.6V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF016B-50-4I-QAF-T | 功能描述:闪存 2.7V to 3.6V 16Mbit SPI Serial 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF016B-50-4I-QAF-T_ | 制造商:Microchip Technology Inc 功能描述: |
| SST25VF016B-50-4I-S2A | 制造商:Microchip Technology Inc 功能描述:Flash Memory 16 Mbit 50 MHz 8-SOIC |
| SST25VF016B-50-4I-S2AF | 功能描述:闪存 16Mbit 50MHz RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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