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参数资料
| 型号： | SST25VF016B-50-4I-QAF |
| 厂商： | Microchip Technology |
| 文件页数： | 16/32页 |
| 文件大小： | 0K |
| 描述： | IC FLASH SER 16M 50MHZ SPI 8WSON |
| 标准包装： | 98 |
| 系列： | SST25 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 16M（2M x 8） |
| 速度： | 50MHz |
| 接口： | SPI 串行 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-WSON |
| 供应商设备封装： | 8-WSON |
| 包装： | 管件 |
| 产品目录页面： | 1452 (CN2011-ZH PDF) |
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16 Mbit SPI Serial Flash
A Microchip Technology Company
SST25VF016B
Data Sheet
32-KByte and 64-KByte Block-Erase
The 32-KByte Block-Erase instruction clears all bits in the selected 32 KByte block to FFH. A Block-
Erase instruction applied to a protected memory area will be ignored. The 64-KByte Block-Erase instruc-
tion clears all bits in the selected 64 KByte block to FFH. A Block-Erase instruction applied to a protected mem-
ory area will be ignored. Prior to any Write operation, the Write-Enable (WREN) instruction must be executed.
CE# must remain active low for the duration of any command sequence. The 32-Kbyte Block-Erase
instruction is initiated by executing an 8-bit command, 52H, followed by address bits [A 23 -A 0 ]. Address
bits [A MS -A 15 ] (A MS = Most Significant Address) are used to determine block address (BA X ), remaining
address bits can be V IL or V IH. CE# must be driven high before the instruction is executed. The 64-Kbyte Block-
Erase instruction is initiated by executing an 8-bit command D8H, followed by address bits [A 23 -A 0 ]. Address bits
[A MS -A 15 ] are used to determine block address (BA X ), remaining address bits can be V IL or V IH. CE# must be
driven high before the instruction is executed. The user may poll the Busy bit in the software status register or
wait T BE for the completion of the internal self-timed 32-KByte Block-Erase or 64-KByte Block-Erase
cycles. See Figures 13 and 14 for the 32-KByte Block-Erase and 64-KByte Block-Erase sequences.
CE#
MODE 3
0 1 2 3 4 5 6 7 8
15 16
23 24
31
SCK
MODE 0
SI
52
ADDR
ADDR
ADDR
SO
MSB
MSB
HIGH IMPEDANCE
1271 32KBklEr.0
Figure 13: 32-KByte Block-Erase Sequence
CE#
MODE 3
0 1 2 3 4 5 6 7 8
15 16
23 24
31
SCK
MODE 0
SI
D8
ADDR
ADDR
ADDR
SO
MSB
MSB
HIGH IMPEDANCE
1271 63KBlkEr.0
Figure 14: 64-KByte Block-Erase Sequence
?2011 Silicon Storage Technology, Inc.
16
DS25044A
08/11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST25VF016B-50-4I-QAF OLD SST P/N | 功能描述:闪存 16M (2Mx8) 50MHz 2.7-3.6V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF016B-50-4I-QAF-T | 功能描述:闪存 2.7V to 3.6V 16Mbit SPI Serial 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF016B-50-4I-QAF-T_ | 制造商:Microchip Technology Inc 功能描述: |
| SST25VF016B-50-4I-S2A | 制造商:Microchip Technology Inc 功能描述:Flash Memory 16 Mbit 50 MHz 8-SOIC |
| SST25VF016B-50-4I-S2AF | 功能描述:闪存 16Mbit 50MHz RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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