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参数资料
| 型号： | SST25VF016B-50-4I-QAF |
| 厂商： | Microchip Technology |
| 文件页数： | 17/32页 |
| 文件大小： | 0K |
| 描述： | IC FLASH SER 16M 50MHZ SPI 8WSON |
| 标准包装： | 98 |
| 系列： | SST25 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 16M（2M x 8） |
| 速度： | 50MHz |
| 接口： | SPI 串行 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-WSON |
| 供应商设备封装： | 8-WSON |
| 包装： | 管件 |
| 产品目录页面： | 1452 (CN2011-ZH PDF) |
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16 Mbit SPI Serial Flash
A Microchip Technology Company
SST25VF016B
Data Sheet
Chip-Erase
The Chip-Erase instruction clears all bits in the device to FFH. A Chip-Erase instruction will be ignored
if any of the memory area is protected. Prior to any Write operation, the Write-Enable (WREN) instruction
must be executed. CE# must remain active low for the duration of the Chip-Erase instruction sequence.
The Chip-Erase instruction is initiated by executing an 8-bit command, 60H or C7H. CE# must be driven
high before the instruction is executed. The user may poll the Busy bit in the software status register or wait
T CE for the completion of the internal self-timed Chip-Erase cycle. See Figure 15 for the Chip-Erase
sequence.
CE#
MODE 3
0 1 2 3 4 5 6 7
SCK
SI
SO
MODE 0
60 or C7
MSB
HIGH IMPEDANCE
1271 ChEr.0
Figure 15: Chip-Erase Sequence
Read-Status-Register (RDSR)
The Read-Status-Register (RDSR) instruction allows reading of the status register. The status register
may be read at any time even during a Write (Program/Erase) operation. When a Write operation is in
progress, the Busy bit may be checked before sending any new commands to assure that the new
commands are properly received by the device. CE# must be driven low before the RDSR instruction is
entered and remain low until the status data is read. Read-Status-Register is continuous with ongoing
clock cycles until it is terminated by a low to high transition of the CE#. See Figure 16 for the RDSR
instruction sequence.
CE#
MODE 3
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
SCK
MODE 0
SI
MSB
05
SO
HIGH IMPEDANCE
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
MSB
Status
Register Out
1271 RDSRseq.0
Figure 16: Read-Status-Register (RDSR) Sequence
?2011 Silicon Storage Technology, Inc.
17
DS25044A
08/11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST25VF016B-50-4I-QAF OLD SST P/N | 功能描述:闪存 16M (2Mx8) 50MHz 2.7-3.6V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF016B-50-4I-QAF-T | 功能描述:闪存 2.7V to 3.6V 16Mbit SPI Serial 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF016B-50-4I-QAF-T_ | 制造商:Microchip Technology Inc 功能描述: |
| SST25VF016B-50-4I-S2A | 制造商:Microchip Technology Inc 功能描述:Flash Memory 16 Mbit 50 MHz 8-SOIC |
| SST25VF016B-50-4I-S2AF | 功能描述:闪存 16Mbit 50MHz RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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