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参数资料
| 型号： | SST25WF040-40-5I-SAF-T |
| 厂商： | Microchip Technology |
| 文件页数： | 18/36页 |
| 文件大小： | 0K |
| 描述： | IC FLASH SER 4MB 40MHZ SPI 8SOIC |
| 标准包装： | 2,000 |
| 系列： | SST25 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 4M (512K x 8) |
| 速度： | 40MHz |
| 接口： | SPI 串行 |
| 电源电压： | 1.65 V ~ 1.95 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
A Microchip Technology Company
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
Sector-Erase
The Sector-Erase instruction clears all bits in the selected 4 KByte sector to FFH. A Sector-Erase
instruction applied to a protected memory area will be ignored. Prior to any Write operation, the Write-
Enable (WREN) instruction must be executed. CE# must remain active low for the duration of any com-
mand sequence. The Sector-Erase instruction is initiated by executing an 8-bit command, 20H, fol-
lowed by address bits [A 23 -A 0 ]. Address bits [A MS -A 12 ] (A MS = Most Significant address) are used to
determine the sector address (SA X ), remaining address bits can be V IL or V IH. CE# must be driven high
before the instruction is executed. The user may poll the Busy bit in the software status register or wait
T SE for the completion of the internal self-timed Sector-Erase cycle. See Figure 13 for the Sector-
Erase sequence.
CE#
MODE 3
0 1 2 3 4 5 6 7 8
15 16
23 24
31
SCK
MODE 0
SI
20
ADD.
ADD.
ADD.
SO
MSB
MSB
HIGH IMPEDANCE
1326 F13.0
Figure 13: Sector-Erase Sequence
32-KByte Block-Erase
The Block-Erase instruction clears all bits in the selected 32 KByte block to FFH. A Block-Erase
instruction applied to a protected memory area is ignored. Prior to any Write operation, the Write-Enable
(WREN) instruction must be executed. CE# must remain active low for the duration of any command
sequence. The Block-Erase instruction is initiated by executing an 8-bit command, 52H, followed by
address bits [A 23 -A 0 ]. Address bits [A MS -A 15 ] (A MS = Most Significant Address) are used to determine
block address (BA X ), remaining address bits can be V IL or V IH. CE# must be driven high before the instruc-
tion is executed. Poll the Busy bit in the software status register or wait T BE for the completion of the inter-
nal self-timed Block-Erase. See Figure 14 for the Block-Erase sequences.
CE#
MODE 3
0 1 2 3 4 5 6 7 8
15 16
23 24
31
SCK
MODE 0
SI
52
ADDR
ADDR
ADDR
SO
MSB
MSB
HIGH IMPEDANCE
1328 F14.0
Figure 14: 32-KByte Block-Erase Sequence
?2011 Silicon Storage Technology, Inc.
18
DS25016A
06/11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST25WF080 | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:8Mbit 1.8V SPI Serial Flash |
| SST25WF080_12 | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:8 Mbit 1.8V SPI Serial Flash |
| SST25WF080-75-4I-SAE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:8Mbit 1.8V SPI Serial Flash |
| SST25WF080-75-4I-SAF | 功能描述:闪存 8M (1Mx8) 75MHz Industrial Temp RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25WF080-75-4I-SAF-T | 功能描述:闪存 1.65 to 1.95V 2Mbit SPI Serial 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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