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参数资料
| 型号： | SST25WF040-40-5I-SAF-T |
| 厂商： | Microchip Technology |
| 文件页数： | 21/36页 |
| 文件大小： | 0K |
| 描述： | IC FLASH SER 4MB 40MHZ SPI 8SOIC |
| 标准包装： | 2,000 |
| 系列： | SST25 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 4M (512K x 8) |
| 速度： | 40MHz |
| 接口： | SPI 串行 |
| 电源电压： | 1.65 V ~ 1.95 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
A Microchip Technology Company
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
Write-Disable (WRDI)
The Write-Disable (WRDI) instruction, 04H, resets the Write-Enable-Latch bit and AAI to 0 disabling
any new Write operations from occurring. The WRDI instruction will not terminate any programming
operation in progress. Any program operation in progress may continue up to T BP after executing the
WRDI instruction. CE# must be driven high before the WRDI instruction is executed. See Figure 19 for
the WRDI instruction sequence.
CE#
MODE 3
0 1 2 3 4 5 6 7
SCK
SI
SO
MODE 0
04
MSB
HIGH IMPEDANCE
1328 Fx19.0
Figure 19: Write Disable (WRDI) Sequence
Enable-Write-Status-Register (EWSR)
The Enable-Write-Status-Register (EWSR) instruction arms the Write-Status-Register (WRSR)
instruction and opens the status register for alteration. The Write-Status-Register instruction must be
executed immediately after the execution of the Enable-Write-Status-Register instruction. This two-
step instruction sequence of the EWSR instruction followed by the WRSR instruction works like SDP
(software data protection) command structure which prevents any accidental alteration of the status
register values. CE# must be driven low before the EWSR instruction is entered and must be driven
high before the EWSR instruction is executed. See Figure 20 for EWSR instruction followed by WRSR
instruction.
Write-Status-Register (WRSR)
The Write-Status-Register instruction writes new values to the BP1, BP0, and BPL bits of the status
register. CE# must be driven low before the command sequence of the WRSR instruction is entered
and driven high before the WRSR instruction is executed. See Figure 20 for EWSR or WREN and
WRSR instruction sequences.
Executing the Write-Status-Register instruction will be ignored when WP# is low and BPL bit is set to
‘1’. When the WP# is low, the BPL bit can only be set from ‘0’ to ‘1’ to lock-down the status register, but
cannot be reset from ‘1’ to ‘0’. When WP# is high, the lock-down function of the BPL bit is disabled and
the BPL, BP0, and BP1 bits in the status register can all be changed. As long as BPL bit is set to ‘0’ or
WP# pin is driven high (V IH ) prior to the low-to-high transition of the CE# pin at the end of the WRSR
instruction, the bits in the status register can all be altered by the WRSR instruction. In this case, a sin-
?2011 Silicon Storage Technology, Inc.
21
DS25016A
06/11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST25WF080 | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:8Mbit 1.8V SPI Serial Flash |
| SST25WF080_12 | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:8 Mbit 1.8V SPI Serial Flash |
| SST25WF080-75-4I-SAE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:8Mbit 1.8V SPI Serial Flash |
| SST25WF080-75-4I-SAF | 功能描述:闪存 8M (1Mx8) 75MHz Industrial Temp RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25WF080-75-4I-SAF-T | 功能描述:闪存 1.65 to 1.95V 2Mbit SPI Serial 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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