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参数资料
| 型号： | SST25WF040-40-5I-SAF-T |
| 厂商： | Microchip Technology |
| 文件页数： | 9/36页 |
| 文件大小： | 0K |
| 描述： | IC FLASH SER 4MB 40MHZ SPI 8SOIC |
| 标准包装： | 2,000 |
| 系列： | SST25 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 4M (512K x 8) |
| 速度： | 40MHz |
| 接口： | SPI 串行 |
| 电源电压： | 1.65 V ~ 1.95 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
A Microchip Technology Company
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
Auto Address Increment (AAI)
The Auto Address Increment Programming-Status bit provides status on whether the device is in AAI
programming mode or Byte-Program mode. The default at power up is Byte-Program mode.
Block-Protection (BP2, BP1, BP0)
The Block-Protection (BP1, BP0) bits define the size of the memory area to be software protected
against any memory Write (Program or Erase) operation, see Tables 5-7. The Write-Status-Register
(WRSR) instruction is used to program the BP1 and BP0 bits as long as WP# is high or the Block-Pro-
tect-Lock (BPL) bit is ‘0’. Chip-Erase can only be executed if Block-Protection bits are all ‘0’. After
power-up, BP2, BP1, and BP0 are set to defaults. See Table 4 for defaults at power-up.
Block Protection Lock-Down (BPL)
When the WP# pin is driven low (V IL ), it enables the Block-Protection-Lock-Down (BPL) bit. When BPL is
set to ‘1’, it prevents any further alteration of the BPL, BP1, and BP0 bits. When the WP# pin is driven high
(V IH ), the BPL bit has no effect and its value is ‘Don’t Care’. After power-up, the BPL bit is reset to ‘0’.
Table 5: Software Status Register Block Protection for SST25WF512
Status Register Bit
Protected Memory Address
Protection Level
None
1 (Upper Quarter Memory)
2 (Upper Half Memory)
3 (Full Memory)
BP1 1
0
0
1
1
BP0
0
1
0
1
512 Kbit
None
00C000H-00FFFFH
008000H-00FFFFH
000000H-00FFFFH
T5.1 25016
1. Default at power-up for BP1 and BP0 is ‘11’.
Table 6: Software Status Register Block Protection for SST25WF010
Status Register Bit
Protected Memory Address
Protection Level
None
1 (Upper Quarter Memory)
2 (Upper Half Memory)
3 (Full Memory)
BP1 1
0
0
1
1
BP0
0
1
0
1
1 Mbit
None
018000H-01FFFFH
010000H-01FFFFH
000000H-01FFFFH
T6.0 25016
1. Default at power-up for BP1 and BP0 is ‘11’.
Table 7: Software Status Register Block Protection for SST25WF020
Status Register Bit
Protected Memory Address
Protection Level
None
1 (Upper Quarter Memory)
2 (Upper Half Memory)
3 (Full Memory)
BP1 1
0
0
1
1
BP0
0
1
0
1
2 Mbit
None
030000H-03FFFFH
020000H-03FFFFH
000000H-03FFFFH
T7.0 25016
1. Default at power-up for BP1 and BP0 is ‘11’.
?2011 Silicon Storage Technology, Inc.
9
DS25016A
06/11
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相关代理商/技术参数 |
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| SST25WF080 | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:8Mbit 1.8V SPI Serial Flash |
| SST25WF080_12 | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:8 Mbit 1.8V SPI Serial Flash |
| SST25WF080-75-4I-SAE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:8Mbit 1.8V SPI Serial Flash |
| SST25WF080-75-4I-SAF | 功能描述:闪存 8M (1Mx8) 75MHz Industrial Temp RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25WF080-75-4I-SAF-T | 功能描述:闪存 1.65 to 1.95V 2Mbit SPI Serial 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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