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参数资料
| 型号： | SST25WF040-40-5I-SAF-T |
| 厂商： | Microchip Technology |
| 文件页数： | 20/36页 |
| 文件大小： | 0K |
| 描述： | IC FLASH SER 4MB 40MHZ SPI 8SOIC |
| 标准包装： | 2,000 |
| 系列： | SST25 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 4M (512K x 8) |
| 速度： | 40MHz |
| 接口： | SPI 串行 |
| 电源电压： | 1.65 V ~ 1.95 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
A Microchip Technology Company
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
Read-Status-Register (RDSR)
The Read-Status-Register (RDSR) instruction, 05H, allows reading of the status register. The status
register may be read at any time even during a Write (Program/Erase) operation. When a Write opera-
tion is in progress, the Busy bit may be checked before sending any new commands to assure that the
new commands are properly received by the device. CE# must be driven low before the RDSR instruc-
tion is entered and remain low until the status data is read. Read-Status-Register is continuous with
ongoing clock cycles until it is terminated by a low to high transition of the CE#. See Figure 17 for the
RDSR instruction sequence.
CE#
MODE 3
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
SCK
SI
MODE 0
MSB
05
SO
HIGH IMPEDANCE
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
MSB
Status
Register Out
1327 F17.0
Figure 17: Read-Status-Register (RDSR) Sequence
Write-Enable (WREN)
The Write-Enable (WREN) instruction, 06H, sets the Write-Enable-Latch bit in the Status Register to 1
allowing Write operations to occur. The WREN instruction must be executed prior to any Write (Pro-
gram/Erase) operation. The WREN instruction may also be used to allow execution of the Write-Sta-
tus-Register (WRSR) instruction; however, the Write-Enable-Latch bit in the Status Register will be
cleared upon the rising edge CE# of the WRSR instruction. CE# must be driven high before the WREN
instruction is executed. See Figure 18 for the WREN instruction sequence.
CE#
MODE 3
0 1 2 3 4 5 6 7
SCK
SI
SO
MODE 0
06
MSB
HIGH IMPEDANCE
1328 F18.0
Figure 18: Write Enable (WREN) Sequence
?2011 Silicon Storage Technology, Inc.
20
DS25016A
06/11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST25WF080 | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:8Mbit 1.8V SPI Serial Flash |
| SST25WF080_12 | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:8 Mbit 1.8V SPI Serial Flash |
| SST25WF080-75-4I-SAE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:8Mbit 1.8V SPI Serial Flash |
| SST25WF080-75-4I-SAF | 功能描述:闪存 8M (1Mx8) 75MHz Industrial Temp RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25WF080-75-4I-SAF-T | 功能描述:闪存 1.65 to 1.95V 2Mbit SPI Serial 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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