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参数资料
| 型号： | SST39VF6401B-70-4I-EKE-T |
| 厂商： | Microchip Technology |
| 文件页数： | 1/36页 |
| 文件大小： | 0K |
| 描述： | IC FLASH MPF 64MBIT 70NS 48TSOP |
| 标准包装： | 1,000 |
| 系列： | SST39 MPF™ |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 64M（4M x 16） |
| 速度： | 70ns |
| 接口： | 并联 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 48-TFSOP（0.724"，18.40mm 宽） |
| 供应商设备封装： | 48-TSOP |
| 包装： | 带卷 (TR) |
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Not recommended for new designs.
Please use SST38VF6401/6402/6403/64040
64 Mbit (x16) Multi-Purpose Flash Plus
A Microchip Technology Company
SST39VF6401B / SST39VF6402B
Not Recommended for New Designs
The SST39VF6401B / SST39VF6402B devices are 4M x16, CMOS Multi-Purpose
Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS
SuperFlash technology. The split-gate cell design and thick-oxide tunneling injec-
tor attain better reliability and manufacturability compared with alternate
approaches. The SST39VF6401B / SST39VF6402B write (Program or Erase)
with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts
for x16 memories and are command set compatible with other Flash devices,
enabling customers to save time and resources in implementation.
Features
? Organized as 4M x16
? Single Voltage Read and Write Operations
– 2.7-3.6V
? Superior Reliability
– Endurance: 100,000 Cycles (Typical)
– Greater than 100 years Data Retention
? Low Power Consumption (typical values at 5 MHz)
– Active Current: 9 mA (typical)
– Standby Current: 3 μA (typical)
– Auto Low Power Mode: 3 μA (typical)
? Hardware Block-Protection/WP# Input Pin
– Top Block-Protection (top 32 KWord)
for SST39VF6402B
– Bottom Block-Protection (bottom 32 KWord)
for SST39VF6401B
? Sector-Erase Capability
– Uniform 2 KWord sectors
? Block-Erase Capability
– Uniform 32 KWord blocks
? Chip-Erase Capability
? Erase-Suspend/Erase-Resume Capabilities
? Hardware Reset Pin (RST#)
? Security-ID Feature
– SST: 128 bits; User: 128 bits
? Fast Read Access Time:
– 70 ns
? Latched Address and Data
? Fast Erase and Word-Program:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 40 ms (typical)
– Word-Program Time: 7 μs (typical)
? Automatic Write Timing
– Internal V PP Generation
? End-of-Write Detection
– Toggle Bits
– Data# Polling
? CMOS I/O Compatibility
? JEDEC Standard
– Flash EEPROM Pin Assignments
– Software command sequence compatibility
- Address format is 11 bits, A 10 -A 0
- Block-Erase 6th Bus Write Cycle is 30H
- Sector-Erase 6th Bus Write Cycle is 50H
? Packages Available
– 48-lead TSOP (12mm x 20mm)
– 48-ball TFBGA (8mm x 10mm)
? All devices are RoHS compliant
?2011 Silicon Storage Technology, Inc.
www.microchip.com
DS25008A
08/11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST39VF6401B-70-4I-EKE-T-CUT TAPE | 制造商:Microchip 功能描述:SST39VF Series 64 Mb (4 M x 16) 3.6 V Multi-Purpose Flash Plus SMT - TSOP-48 |
| SST39VF6402B-70-4C-B1KE | 功能描述:闪存 64M (4Mx16) 70ns Commercial Temp RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39VF6402B-70-4C-B1KE-T | 功能描述:闪存 2.7 to 3.6V 64Mbit Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39VF6402B-70-4C-EKE | 功能描述:闪存 64M (4Mx16) 70ns Commercial Temp RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39VF6402B-70-4C-EKE-T | 功能描述:闪存 2.7 to 3.6V 64Mbit Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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