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参数资料
| 型号： | SST55LC100-45-C-BWE |
| 元件分类： | 存储控制器/管理单元 |
| 英文描述： | FLASH MEMORY DRIVE CONTROLLER, PBGA84 |
| 封装： | ROHS COMPLIANT, MO-210, TFBGA-84 |
| 文件页数： | 54/80页 |
| 文件大小： | 758K |
| 代理商： | SST55LC100-45-C-BWE |
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58
Advance Information
CompactFlash Card Controller
SST55LC100
2005 Silicon Storage Technology, Inc.
S71298-00-000
10/05
9.2.6.57 Write-Multiple-Without-Erase - CDH
This command is similar to the Write-Multiple command with the exception that an implied Erase before
Write operation is not performed. The sectors should be pre-erased with the Erase-Sector(s) command
before this command is issued. If the sectors are not pre-erased with the Erase-Sector(s) command, a
normal Write-Multiple operation will occur.
9.2.6.58 Write-Sector(s) - 30H or 31H
This command writes from 1 to 256 sectors as specified in the Sector Count register. A sector count of
zero requests 256 sectors. The transfer begins at the sector specified in the Sector Number register.
When this command is accepted, the CompactFlash card controller sets BSY, then sets DRQ and
clears BSY, then waits for the host to fill the sector buffer with the data to be written. No interrupt is
generated to start the first host transfer operation. No data should be transferred by the host until BSY
has been cleared by the host.
For multiple sectors, after the first sector of data is in the buffer, BSY will be set and DRQ will be
cleared. After the next buffer is ready for data, BSY is cleared, DRQ is set and an interrupt is generated.
When the final sector of data is transferred, BSY is set and DRQ is cleared. It will remain in this state
until the command is completed at which time BSY is cleared and an interrupt is generated.
If an error occurs during a write of more than one sector, writing terminates at the sector where the
error occurs. The Command Block registers contain the cylinder, head and sector number of the sector
where the error occurred. The host may then read the command block to determine what error has
occurred, and on which sector.
Bit ->
76543210
Command (7)
CDH
C/D/H (6)
1LBA
1
Drive
Head
Cyl High (5)
Cylinder High
Cyl Low (4)
Cylinder Low
Sec Num (3)
Sector Number
Sec Cnt (2)
Sector Count
Feature (1)
X
Bit ->
76543210
Command (7)
30H or 31H
C/D/H (6)
1
LBA
1
Drive
Head (LBA 27-24)
Cyl High (5)
Cylinder High (LBA 23-16)
Cyl Low (4)
Cylinder Low (LBA 15-8)
Sec Num (3)
Sector Number (LBA 7-0)
Sec Cnt (2)
Sector Count
Feature (1)
X
相关PDF资料 |
PDF描述 |
|---|---|
| SST55LC100M-45-C-BWE | IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, PBGA84 |
| SST55LD017D-40-C-TQWE | FLASH MEMORY DRIVE CONTROLLER, PQFP100 |
| SST55LD017D-40-I-TQW | FLASH MEMORY DRIVE CONTROLLER, PQFP100 |
| SST55LD019A-45-C-TQPE | FLASH MEMORY DRIVE CONTROLLER, PQFP64 |
| SST55LD019C-45-I-BWE | FLASH MEMORY DRIVE CONTROLLER, PBGA84 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SST55LC100-45-C-TQWE | 功能描述:总线收发器 Compact Flash Card Controller RoHS:否 制造商:Fairchild Semiconductor 逻辑类型:CMOS 逻辑系列:74VCX 每芯片的通道数量:16 输入电平:CMOS 输出电平:CMOS 输出类型:3-State 高电平输出电流:- 24 mA 低电平输出电流:24 mA 传播延迟时间:6.2 ns 电源电压-最大:2.7 V, 3.6 V 电源电压-最小:1.65 V, 2.3 V 最大工作温度:+ 85 C 封装 / 箱体:TSSOP-48 封装:Reel |
| SST55LC100-45-I-BWE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:CompactFlash Card Controller |
| SST55LC100-45-I-TQWE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:CompactFlash Card Controller |
| SST55LC100M | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:CompactFlash Card Controller |
| SST55LC100M-45-C-BWE | 功能描述:总线收发器 Compact Flash 45MHz 3.3V Commercial RoHS:否 制造商:Fairchild Semiconductor 逻辑类型:CMOS 逻辑系列:74VCX 每芯片的通道数量:16 输入电平:CMOS 输出电平:CMOS 输出类型:3-State 高电平输出电流:- 24 mA 低电平输出电流:24 mA 传播延迟时间:6.2 ns 电源电压-最大:2.7 V, 3.6 V 电源电压-最小:1.65 V, 2.3 V 最大工作温度:+ 85 C 封装 / 箱体:TSSOP-48 封装:Reel |
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