- 您现在的位置：买卖IC网 > PDF目录69345 > SST85LD1004M-60-4C-LBTE (SILICON STORAGE TECHNOLOGY INC) IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, PBGA91 PDF资料下载
参数资料
| 型号： | SST85LD1004M-60-4C-LBTE |
| 厂商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分类： | 存储控制器/管理单元 |
| 英文描述： | IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, PBGA91 |
| 封装： | 12 X 24 MM, ROHS COMPLIANT, MO-210, LBGA-91 |
| 文件页数： | 10/12页 |
| 文件大小： | 212K |
| 代理商： | SST85LD1004M-60-4C-LBTE |
7
Fact Sheet
1 GByte / 2 GByte / 4 GByte NANDrive
SST85LD1001K / SST85LD1002L / SST85LD1004M
2008 Silicon Storage Technology, Inc.
S71319(01)-02-000
6/08
4.0 CAPACITY SPECIFICATION
Table 4-1 shows the default capacity and specific settings for heads, sectors, and cylinders. Users can change the
default settings in the drive ID table using the Identity-Drive command. If the total number of bytes is less than the
default, the remaining space could be used as spares to increase the flash drive endurance. It should also be noted that
if the total flash drive capacity exceeds the total default number of bytes, the flash drive endurance will be reduced.
TABLE
4-1: Default NANDrive Settings
Capacity
Total Bytes
Cylinders
Heads
Sectors
Max LBA
1 GByte
1,024,966,656
1986
16
63
2,001,888
2 GByte
2,048,385,024
3969
16
63
4,000,752
4 GByte
4,096,253,952
7937
16
63
8,000,496
T4-1.6 1343
TABLE
4-2: Sustained Performance
Product
Write Performance
Read Performance
SST85LD1001K-60-4C-LBTE
SST85LD1001K-60-PC-LBTE
Up to 2 MByte/sec
Up to 13 MByte/sec
SST85LD1002L-60-4C-LBTE
SST85LD1002L-60-PC-LBTE
Up to 4 MByte/sec
Up to 23 MByte/sec
SST85LD1004M-60-4C-LBTE
SST85LD1004M-60-PC-LBTE
Up to 4 MByte/sec
Up to 23 MByte/sec
T4-2.1343
TABLE
4-3: Supported ATA Modes
Products
PIO
MWDMA
UltraDMA
SST85LD1001K-60-4C-LBTE
SST85LD1002L-60-4C-LBTE
SST85LD1004M-60-4C-LBTE
SST85LD1001K-60-PC-LBTE
SST85LD1002L-60-PC-LBTE
SST85LD1004M-60-PC-LBTE
Up to Mode-6
Up to Mode-4
T4-3.1343
TABLE
4-4: Advanced NAND Management Technology Write Cycles
Products
Write Cycles
per Group
No. of Groups
per Product
Wear-leveling
Group Size
Cluster Size1
1. Optimized host cluster size setting.
SST85LD1001K-60-PC-LBTE
10M
4
256 MBytes
2 KByte
SST85LD1002L-60-PC-LBTE
10M
4
512 MBytes
4 KByte
SST85LD1004M-60-PC-LBTE
10M
4
1 GByte
8 KByte
T4-4.1343
相关PDF资料 |
PDF描述 |
|---|---|
| SST85LD1001K-60-4C-LBTE | IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, PBGA91 |
| SST85LD1002L-60-4C-LBTE | IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, PBGA91 |
| SST89C58RC-40-I-QIF | 8-BIT, FLASH, 40 MHz, MICROCONTROLLER, QCC40 |
| SST89E54RD2A-40-C-NJE | 8-BIT, FLASH, 40 MHz, MICROCONTROLLER, PQCC44 |
| SST89E58RD2-40-C-PIE | 8-BIT, FLASH, 40 MHz, MICROCONTROLLER, PDIP40 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SST85LD1004M-60-PC-LBTE | 功能描述:闪存 4GB NAND 60ns 3.3V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST85LD1004T-60-RI-LBTE | 功能描述:闪存 4GB NAND 60ns 3.3V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST85LD1004T-60-RI-LCTE | 功能描述:闪存 4G NAND 60ns 3.3V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST85LD1004T-60-RI-LCTE-TM023 | 功能描述:闪存 4G NAND 60ns 3.3V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST85LD1004U-60-5I-LBTE | 功能描述:闪存 4G NAND 60ns 3.3V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。