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参数资料
| 型号： | SST85LD1004M-60-4C-LBTE |
| 厂商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分类： | 存储控制器/管理单元 |
| 英文描述： | IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, PBGA91 |
| 封装： | 12 X 24 MM, ROHS COMPLIANT, MO-210, LBGA-91 |
| 文件页数： | 5/12页 |
| 文件大小： | 212K |
| 代理商： | SST85LD1004M-60-4C-LBTE |
Fact Sheet
1 GByte / 2 GByte / 4 GByte NANDrive
SST85LD1001K / SST85LD1002L / SST85LD1004M
2008 Silicon Storage Technology, Inc.
S71319(01)-02-000
6/08
2
1.0 GENERAL DESCRIPTION
Each NANDrive contains an integrated ATA Controller and
one or more NAND Flash dice in a LBGA package. Refer
to Figure 2-1 for the NANDrive block diagram.
1.1 Performance-optimized NANDrive
The heart of the NANDrive is the ATA Flash Disk Controller
which translates standard ATA signals into flash media data
and control signals. The following components contribute to
the NANDrive’s operation.
1.1.1 Microcontroller Unit (MCU)
The MCU translates ATA/IDE commands into data and
control signals required for flash media operation.
1.1.2 Internal Direct Memory Access (DMA)
The NANDrive uses internal DMA allowing instant data
transfer from buffer to flash media. This implementation
eliminates microcontroller overhead associated with the
traditional, firmware-based approach, thereby increasing
the data transfer rate.
1.1.3 Power Management Unit (PMU)
The
power
management
unit
controls
the
power
consumption of the NANDrive. The PMU dramatically
reduces the power consumption of the NANDrive by
putting the part of the circuitry that is not in operation into
sleep mode.
1.1.4 SRAM Buffer
A key contributor to the NANDrive performance is an
SRAM buffer. The buffer optimizes the host’s data transfer
to and from the flash media.
1.1.5 Embedded Flash File System
The embedded flash file system is an integral part of the
NANDrive. It contains MCU firmware that performs the
following tasks:
1. Translates host side signals into flash media
writes and reads.
2. Provides flash media wear leveling to spread the
flash writes across all memory address space to
increase the longevity of flash media.
3. Keeps track of data file structures.
1.1.6 Error Correction Code (ECC)
High performance is achieved through optimized hardware
error detection and correction.
1.1.7 Serial Communication Interface (SCI)
The Serial Communication Interface (SCI) is designed for
manufacturing error reporting. Always provide access to
the SCI interface in the PCB design to aid in design
validation.
1.1.8 Multi-tasking Interface
The multi-tasking interface enables fast, sustained write
performance by allowing concurrent Read, Program, and
Erase operations to multiple flash media devices.
1.2 NAND Flash
The NANDrive family utilize standard NAND Flash for data
storage.
1.3 Advanced NAND Management
Technology
Advanced NAND management technology balances the
wear on erased blocks with an advanced wear-leveling
scheme which provides a minimum of 10 million product
write cycles. Advanced NAND management technology
tracks the number of program/erase cycles within a group.
When the host updates data, higher priority is given to the
less frequently written erase blocks; thereby, evenly
distributing host writes within a wear-leveling group.
Advanced NAND management technology enhances
NANDrive security with password protection and four
independent protection zones which can be set to Read-
only or Hidden.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST85LD1004M-60-PC-LBTE | 功能描述:闪存 4GB NAND 60ns 3.3V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST85LD1004T-60-RI-LBTE | 功能描述:闪存 4GB NAND 60ns 3.3V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST85LD1004T-60-RI-LCTE | 功能描述:闪存 4G NAND 60ns 3.3V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST85LD1004T-60-RI-LCTE-TM023 | 功能描述:闪存 4G NAND 60ns 3.3V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST85LD1004U-60-5I-LBTE | 功能描述:闪存 4G NAND 60ns 3.3V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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