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参数资料
| 型号： | SSTUB32S869BHLFT |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 8/17页 |
| 文件大小： | 0K |
| 描述： | IC REGIST BUFF 14BIT DDR2 150BGA |
| 产品变化通告： | Product Discontinuation 09/Dec/2011 |
| 标准包装： | 2,000 |
| 类型： | 缓冲器 |
| Tx/Rx类型： | LVCMOS |
| 延迟时间： | 3.0ns |
| 电容 - 输入： | 3.5pF |
| 电源电压： | 1.7 V ~ 1.9 V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 150-TFBGA |
| 供应商设备封装： | 150-CABGA（8x13） |
| 包装： | 带卷 (TR) |
16
ICSSSTUB32S869B
Advance Information
1203—04/11/06
(1) CL includes probe and jig capacitance.
Figure 22 — Partial parity out load circuit
VTT = VDD/2
VICR Cross Point Voltage
Vi(P-P) = 600mV
tPLH and tPHL are the same as tPD.
Figure 23 — Partial parity out voltage waveform, propagation delay time with respect to CLK input
RL=1K
CL=5pF
DUT
OUT
Testpoint
See Note (1)
CK
tPLH
tPHL
VICR
Vi(P-P)
VTT
Output
VTT
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