参数资料
型号: ST72F324K4
英文描述: 64Mb EDO/FPM - OBSOLETE
中文描述: 8位微控制器嵌套中断。闪光。 10位ADC。 4定时器。的SPI。 SCI接口
文件页数: 51/161页
文件大小: 2070K
代理商: ST72F324K4
ST72324
144/161
10-BIT ADC CHARACTERISTICS (Cont’d)
12.12.3 ADC Accuracy
Conditions: VDD=5V
Notes:
1. Injecting negative current on any of the analog input pins significantly reduces the accuracy of any conversion being
performed on any analog input.
Analog pins can be protected against negative injection by adding a Schottky diode (pin to ground). Injecting negative
current on digital input pins degrades ADC accuracy especially if performed on a pin close to the analog input pins.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 12.8 does not affect the ADC
accuracy.
2. Data based on characterization results, monitored in production.
Figure 94. ADC Accuracy Characteristics
Symbol
Parameter
Conditions
Typ
Max
Unit
|ET|
Total unadjusted error1)
4
LSB
EO
Offset error 1)
3
3.52)
EG
Gain Error 1)
-0.5
-22)
|ED|
Differential linearity error 1)
CPU in run mode @ fADC 2 MHz.
1.5
4.52)
|EL|
Integral linearity error 1)
CPU in run mode @ fADC 2 MHz.
1.5
4.52)
EO
EG
1LSBIDEAL
1LSB
IDEAL
V
AREF
V
SS A
1024
--------------------------------------------
=
Vin (LSBIDEAL)
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
ET=Total Unadjusted Error: maximum deviation
between the actual and the ideal transfer curves.
EO=Offset Error: deviation between the first actual
transition and the first ideal one.
EG=Gain Error: deviation between the last ideal
transition and the last actual one.
ED=Differential Linearity Error: maximum deviation
between actual steps and the ideal one.
EL=Integral Linearity Error: maximum deviation
between any actual transition and the end point
correlation line.
Digital Result ADCDR
1023
1022
1021
5
4
3
2
1
0
7
6
1
2
345
67
1021 1022 1023 1024
(1)
(2)
ET
ED
EL
(3)
VAREF
VSSA
相关PDF资料
PDF描述
ST72F324K6 64Mb EDO/FPM - OBSOLETE
ST72F611F1 64Mb EDO/FPM - OBSOLETE
ST72F611F1B1 64Mb EDO/FPM - OBSOLETE
ST72P621L4B1 LOW SPEED USB 8-BIT MCU WITH 3 ENDPOINTS. FLASH OR ROM MEMORY. LVD. WDG. 10-BIT ADC. 2 TIMERS. SCI. SPI
ST72T213G1B3 8-BIT MCU WITH 4 TO 8K ROM/OTP/EPROM, 256 BYTES RAM, ADC, WDG, SPI AND 1 OR 2 TIMERS
相关代理商/技术参数
参数描述
ST72F324K4B6 功能描述:8位微控制器 -MCU 5V RANGE 8B MCU RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
ST72F324K4T6 功能描述:8位微控制器 -MCU Flash 16K SPI/SCI RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
ST72F324K4T6TR 功能描述:8位微控制器 -MCU 5V RANGE 8B MCU RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
ST72F324K4TA 功能描述:8位微控制器 -MCU Flask 16K SPI/SCI RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
ST72F324K4TA/TR 功能描述:8位微控制器 -MCU AUTO 8BIT MICRO RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT