收藏本站
参数资料
型号： ST7PLU09MAE
厂商： STMICROELECTRONICS
元件分类： 微控制器/微处理器
英文描述： 8-BIT, MROM, 8 MHz, MICROCONTROLLER, PDSO8
封装： 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8
文件页数： 3/124页
文件大小： 1995K
代理商： ST7PLU09MAE
Electrical characteristics
ST7LUS5, ST7LU05, ST7LU09
100/124
12.7
EMC (electromagnetic compatibilty) characteristics
Susceptibility tests are performed on a sample basis during product characterization.
12.7.1
Functional EMS (electromagnetic susceptibility)
Based on a simple running application on the product (toggling two LEDs through I/O ports),
the product is stressed by two electromagnetic events until a failure occurs (indicated by the
LEDs).
●
ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device
until a functional disturbance occurs. This test conforms with the IEC 1000-4-2
standard.
●
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and
VSS through a 100pF capacitor, until a functional disturbance occurs. This test
conforms with the IEC 1000-4-4 standard.
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
IDD
Supply current(6)
Read / Write / Erase
modes
fCPU = 8 MHz, VDD = 5.5V
2.6
mA
No Read/No Write mode
100
A
Power down mode / HALT
0
0.1
1.
TA = -40°C to 85°C, unless otherwise specified.
2.
Up to 32 bytes can be programmed at a time.
3.
Data based on reliability test results and monitored in production.
4.
The data retention time increases when the TA decreases.
5.
Design target value pending full product characterization.
6.
Guaranteed by Design. Not tested in production.
Table 74.
EEPROM memory (ST7FLU09 only)
Symbol
Parameter
Conditions(1)
1.
TA = -40°C to 125°C, unless otherwise specified.
Min
Typ
Max
Unit
VDD
Operating voltage for EEPROM
write/erase
Refer to operating range of
VDD with TA, Section 12.3
on page 92
3.0
5.5
V
tprog
Programming time for 1~32
bytes
510
ms
tRET
(2)
2.
Data based on reliability test results and monitored in production.
Data retention(3)
3.
The data retention time increases when the TA decreases.
TA = +55°C
20
years
NRW
Write/erase cycles
TA = +25°C
300k
cycles
Table 73.
Flash program memory (continued)
Symbol
Parameter
Conditions(1)
Min
Typ
Max
Unit
相关PDF资料
PDF描述
ST90135M5T6 16-BIT, MROM, 24 MHz, MICROCONTROLLER, PQFP80
ST90T158M9Q6 16-BIT, OTPROM, 24 MHz, MICROCONTROLLER, PQFP80
ST90158M9Q6 16-BIT, MROM, 24 MHz, MICROCONTROLLER, PQFP80
ST9020B6/XX 16-BIT, MROM, 24 MHz, MICROCONTROLLER, PDIP40
ST9027B6/XX 16-BIT, MROM, 24 MHz, MICROCONTROLLER, PDIP40
相关代理商/技术参数
参数描述
ST7PMC1K2B3 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8-bit MCU with nested interrupts, Flash, 10-bit ADC, brushless motor control, five timers, SPI, LINSCI?
ST7PMC1K2B6 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8-BIT MCU WITH NESTED INTERRUPTS, FLASH, 10-BIT ADC, BRUSHLESS MOTOR CONTROL, FIVE TIMERS, SPI, LINSCI
ST7PMC1K2T3 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8-bit MCU with nested interrupts, Flash, 10-bit ADC, brushless motor control, five timers, SPI, LINSCI?
ST7PMC1K2T6 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8-BIT MCU WITH NESTED INTERRUPTS, FLASH, 10-BIT ADC, BRUSHLESS MOTOR CONTROL, FIVE TIMERS, SPI, LINSCI
ST7PMC1K2T6/ST7PMC1K2 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8-BIT MCU WITH NESTED INTERRUPTS, FLASH, 10-BIT ADC, BRUSHLESS MOTOR CONTROL, FIVE TIMERS, SPI, LINSCI
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*