- 您现在的位置：买卖IC网 > PDF目录372324 > STB11NM80 (意法半导体) N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh?Power MOSFET PDF资料下载
参数资料
| 型号： | STB11NM80 |
| 厂商： | 意法半导体 |
| 英文描述： | N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh?Power MOSFET |
| 中文描述： | N沟道800V的- 0.35ohm - 11A条TO-220/FP/D2PAK/TO-247的MDmesh？功率MOSFET |
| 文件页数： | 12/12页 |
| 文件大小： | 195K |
| 代理商： | STB11NM80 |
STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1
12/12
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of suchinformation norfor any infringement of patents orother rights ofthird partieswhich mayresult from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
TheST logo is a registered trademark of STMicroelectronics
2002 STMicroelectronics - Printedin Italy - All RightsReserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada -China - Finland - France - Germany- Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco
Singapore - Spain - Sweden - Switzerland- United Kingdom - United States.
http://www.st.com
相关PDF资料 |
PDF描述 |
|---|---|
| STB130NH02L | N-CHANNEL 24V - 0.0034 OHM - 120A D2PAK STRIPFET III POWER MOSFET FOR DC-DC CONVERSION |
| STB130NH02LT4 | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 90A I(D) | TO-263AB |
| STB13NK60Z-1 | N-CHANNEL 600V-0.48ohm-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
| STB13NK60 | N-CHANNEL 600V-0.48ohm-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
| STB13NK60Z | N-CHANNEL 600V-0.48ohm-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| STB11NM80_07 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-channel 800 V - 0.35 ヘ - 11 A - TO-220/FP- D2PAK - TO-247 MDmesh⑩ Power MOSFET |
| STB11NM80T4 | 功能描述:MOSFET N-Ch 800 Volt 11 Amp Power MDmesh RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB12-0-0 | 制造商:TE Connectivity 功能描述:CABLE MARKER E SIZE12 0 PK30 制造商:TE Connectivity 功能描述:CABLE MARKER, E, SIZE12, 0, PK30 制造商:TE Connectivity 功能描述:CABLE MARKER, E, SIZE12, 0, PK30, Cable Diameter Min:4.5mm, Cable Diameter Max:6 |
| STB120N4F6 | 功能描述:MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB120N4LF6 | 功能描述:MOSFET N-Ch 40V 3.1 Ohm STripFET VI DeepGATE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。