参数资料
型号: STM32F100R6T6B
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 32-BIT, FLASH, 24 MHz, RISC MICROCONTROLLER, PQFP64
封装: 10 X 10 MM, ROHS COMPLAINT, LQFP-64
文件页数: 27/86页
文件大小: 1200K
代理商: STM32F100R6T6B
STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
Electrical characteristics
Doc ID 16455 Rev 5
5.1.7
Current consumption measurement
Figure 11.
Current consumption measurement scheme
5.2
Absolute maximum ratings
Stresses above the absolute maximum ratings listed in Table 5: Voltage characteristics,
damage to the device. These are stress ratings only and functional operation of the device
at these conditions is not implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
ai14126
VBAT
VDD
VDDA
IDD_VBAT
IDD
Table 5.
Voltage characteristics
Symbol
Ratings
Min
Max
Unit
VDD VSS
External main supply voltage (including
VDDA and VDD)
(1)
1.
All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power
supply, in the permitted range.
–0.3
4.0
V
VIN
Input voltage on five volt tolerant pin(2)
2.
IINJ(PIN) must never be exceeded (see Table 6: Current characteristics). This is implicitly insured if VIN
maximum is respected. If VIN maximum cannot be respected, the injection current must be limited
externally to the IINJ(PIN) value. A positive injection is induced by VIN> VINmax while a negative injection is
induced by VIN<VSS.
VSS 0.3
+5.5
Input voltage on any other pin(2)
VSS 0.3
VDD+0.3
|
V
DDx|
Variations between different VDD power pins
50
mV
|VSSX VSS|
Variations between all the different ground
pins
50
VESD(HBM)
Electrostatic discharge voltage (human body
model)
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