参数资料
型号: STM32F100R6T6B
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 32-BIT, FLASH, 24 MHz, RISC MICROCONTROLLER, PQFP64
封装: 10 X 10 MM, ROHS COMPLAINT, LQFP-64
文件页数: 55/86页
文件大小: 1200K
代理商: STM32F100R6T6B
STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
Electrical characteristics
Doc ID 16455 Rev 5
Input/output AC characteristics
The definition and values of input/output AC characteristics are given in Figure 26 and
Table 35, respectively.
Unless otherwise specified, the parameters given in Table 35 are derived from tests
performed under the ambient temperature and VDD supply voltage conditions summarized
Table 35.
I/O AC characteristics(1)
1.
The I/O speed is configured using the MODEx[1:0] bits. Refer to the STM32F10xxx reference manual for a
description of GPIO Port configuration register.
MODEx
[1:0] bit
value(1)
Symbol
Parameter
Conditions
Max
Unit
10
fmax(IO)out Maximum frequency
(2)
2.
The maximum frequency is defined in Figure 26.
CL = 50 pF, VDD = 2 V to 3.6 V
MHz
tf(IO)out
Output high to low level fall
time
CL = 50 pF, VDD = 2 V to 3.6 V
125(3)
3.
Guaranteed by design, not tested in production.
ns
tr(IO)out
Output low to high level rise
time
125(3)
01
fmax(IO)out Maximum frequency
CL= 50 pF, VDD = 2 V to 3.6 V
10(3)
MHz
tf(IO)out
Output high to low level fall
time
CL= 50 pF, VDD = 2 V to 3.6 V
25(3)
ns
tr(IO)out
Output low to high level rise
time
25(3)
11
fmax(IO)out Maximum frequency
CL = 50 pF, VDD = 2 V to 3.6 V
24
MHz
tf(IO)out
Output high to low level fall
time
CL = 30 pF, VDD = 2.7 V to 3.6 V
ns
CL = 50 pF, VDD = 2.7 V to 3.6 V
CL = 50 pF, VDD = 2 V to 2.7 V
12(3)
tr(IO)out
Output low to high level rise
time
CL = 30 pF, VDD = 2.7 V to 3.6 V
CL = 50 pF, VDD = 2.7 V to 3.6 V
CL = 50 pF, VDD = 2 V to 2.7 V
12(3)
-tEXTIpw
Pulse width of external
signals detected by the
EXTI controller
10(3)
ns
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