参数资料
型号: STM32F100R6T6B
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 32-BIT, FLASH, 24 MHz, RISC MICROCONTROLLER, PQFP64
封装: 10 X 10 MM, ROHS COMPLAINT, LQFP-64
文件页数: 29/86页
文件大小: 1200K
代理商: STM32F100R6T6B
STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
Electrical characteristics
Doc ID 16455 Rev 5
5.3.2
Operating conditions at power-up / power-down
Subject to general operating conditions for TA.
Table 9.
Operating conditions at power-up / power-down
5.3.3
Embedded reset and power control block characteristics
The parameters given in Table 10 are derived from tests performed under the ambient
temperature and VDD supply voltage conditions summarized in Table 8.
VBAT
Backup operating voltage
1.8
3.6
V
P
D
Power dissipation at TA =
85 °C for suffix 6 or TA =
105 °C for suffix 7(2)
LQFP100
434
mW
LQFP64
444
TFBGA64
308
LQFP48
363
TA
Ambient temperature for 6
suffix version
Maximum power dissipation
–40
85
°C
Low power dissipation(3)
–40
105
Ambient temperature for 7
suffix version
Maximum power dissipation
–40
105
°C
Low power dissipation(3)
–40
125
TJ
Junction temperature range
6 suffix version
–40
105
°C
7 suffix version
–40
125
1.
When the ADC is used, refer to Table 41: ADC characteristics.
2.
If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Table 6.2: Thermal
3.
In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see
Table 8.
General operating conditions (continued)
Symbol
Parameter
Conditions
Min
Max
Unit
Symbol
Parameter
Min
Max
Unit
tVDD
VDD rise time rate
0
s/V
VDD fall time rate
20
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