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参数资料
型号： STM32F207VCT7TR
厂商： STMICROELECTRONICS
元件分类： 微控制器/微处理器
英文描述： 32-BIT, FLASH, 120 MHz, RISC MICROCONTROLLER, PQFP100
封装： 14 X 14 MM, ROHS COMPLIANT, LQFP-100
文件页数： 119/163页
文件大小： 2275K
代理商： STM32F207VCT7TR
STM32F205xx, STM32F207xx
Electrical characteristics
Doc ID 15818 Rev 7
59/163
Table 11.
Limitations depending on the operating power supply range
Operating
power
supply
range
ADC
operation
Maximum
Flash
memory
access
frequency
(fFlashmax)
Number of wait
states at
maximum CPU
frequency
(fCPUmax=
120 MHz)(1)
I/O operation
FSMC
controller
operation
Possible
Flash
memory
operations
VDD =1.8 to
2.1 V(2)
Conversion
time up to
1 Msps
16 MHz with
no Flash
memory wait
state
7(3)
– Degraded
speed
performance
– No I/O
compensation
up to 30 MHz
8-bit erase
and program
operations
only
VDD = 2.1 to
2.4 V
Conversion
time up to
1 Msps
18 MHz with
no Flash
memory wait
state
6(3)
– Degraded
speed
performance
– No I/O
compensation
up to 30 MHz
16-bit erase
and program
operations
VDD = 2.4 to
2.7 V
Conversion
time up to
2Msps
24 MHz with
no Flash
memory wait
state
4(3)
– Degraded
speed
performance
– I/O
compensation
works
up to 48 MHz
16-bit erase
and program
operations
VDD = 2.7 to
3.6 V(4)
Conversion
time up to
2Msps
30 MHz with
no Flash
memory wait
state
3(3)
– Full-speed
operation
– I/O
compensation
works
–up to
60 MHz
when VDD =
3.0 to 3.6 V
–up to
48 MHz
when VDD =
2.7 to 3.0 V
32-bit erase
and program
operations
1.
The number of wait states can be reduced by reducing the CPU frequency (see Figure 19).
2.
If IRROFF is set to VDD, this value can be lowered to 1.65 V when the device operates in a reduced temperature range.
3.
Thanks to the ART accelerator and the 128-bit Flash memory, the number of wait states given here does not impact the
execution speed from Flash memory since the ART accelerator allows to achieve a performance equivalent to 0 wait state
program execution.
4.
The voltage range for OTG USB FS can drop down to 2.7 V. However it is degraded between 2.7 and 3 V.
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