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参数资料
型号： STM32F207VCT7TR
厂商： STMICROELECTRONICS
元件分类： 微控制器/微处理器
英文描述： 32-BIT, FLASH, 120 MHz, RISC MICROCONTROLLER, PQFP100
封装： 14 X 14 MM, ROHS COMPLIANT, LQFP-100
文件页数： 124/163页
文件大小： 2275K
代理商： STM32F207VCT7TR
STM32F205xx, STM32F207xx
Electrical characteristics
Doc ID 15818 Rev 7
63/163
5.3.6
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 18: Current consumption
measurement scheme.
All Run mode current consumption measurements given in this section are performed using
CoreMark code.
VBOR1
Brownout level 1
threshold
Falling edge
2.13
2.19
2.24
V
Rising edge
2.23
2.29
2.33
V
VBOR2
Brownout level 2
threshold
Falling edge
2.44
2.50
2.56
V
Rising edge
2.53
2.59
2.63
V
VBOR3
Brownout level 3
threshold
Falling edge
2.75
2.83
2.88
V
Rising edge
2.85
2.92
2.97
VBORhyst
(2)
BOR hysteresis
-
100
-
mV
TRSTTEMPO
(2)(3) Reset temporization
0.5
1.5
3.0
ms
IRUSH
(2)
InRush current on
voltage regulator
power-on (POR or
wakeup from Standby)
-
160
200
mA
ERUSH
(2)
InRush energy on
voltage regulator
power-on (POR or
wakeup from Standby)
VDD = 1.8 V, TA = 105 °C,
IRUSH = 171 mA for 31 s
--
5.4
C
1.
The product behavior is guaranteed by design down to the minimum VPOR/PDR value.
2.
Guaranteed by design, not tested in production.
3.
The reset temporization is measured from the power-on (POR reset or wakeup from VBAT) to the instant
when first instruction is read by the user application code.
Table 14.
Embedded reset and power control block characteristics (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
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