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参数资料
型号： STM32F207VCT7TR
厂商： STMICROELECTRONICS
元件分类： 微控制器/微处理器
英文描述： 32-BIT, FLASH, 120 MHz, RISC MICROCONTROLLER, PQFP100
封装： 14 X 14 MM, ROHS COMPLIANT, LQFP-100
文件页数： 15/163页
文件大小： 2275K
代理商： STM32F207VCT7TR
STM32F205xx, STM32F207xx
Electrical characteristics
Doc ID 15818 Rev 7
111/163
a
Note:
ADC accuracy vs. negative injection current: Injecting a negative current on any of the
standard (non-robust) analog input pins should be avoided as this significantly reduces the
accuracy of the conversion being performed on another analog input. It is recommended to
add a Schottky diode (pin to ground) to standard analog pins which may potentially inject
negative currents.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in
Section 5.3.16 does not affect the ADC accuracy.
Figure 49.
ADC accuracy characteristics
1.
Example of an actual transfer curve.
2.
Ideal transfer curve.
3.
End point correlation line.
4.
ET = Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves.
EO = Offset Error: deviation between the first actual transition and the first ideal one.
EG = Gain Error: deviation between the last ideal transition and the last actual one.
ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one.
EL = Integral Linearity Error: maximum deviation between any actual transition and the end point
correlation line.
Table 62.
ADC accuracy (1)
1.
Better performance could be achieved in restricted VDD, frequency and temperature ranges.
Symbol
Parameter
Test conditions
Typ
Max(2)
2.
Based on characterization, not tested in production.
Unit
ET
Total unadjusted error
fPCLK2 = 60 MHz,
fADC = 30 MHz, RAIN < 10 kΩ,
VDDA = 1.8
(3) to 3.6 V
3.
If IRROFF is set to VDD, this value can be lowered to 1.65 V when the device operates in a reduced
temperature range.
±2
±5
LSB
EO
Offset error
±1.5
±2.5
EG
Gain error
±1.5
±3
ED
Differential linearity error
±1
±2
EL
Integral linearity error
±1.5
±3
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