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参数资料
型号： STM32F207VCT7TR
厂商： STMICROELECTRONICS
元件分类： 微控制器/微处理器
英文描述： 32-BIT, FLASH, 120 MHz, RISC MICROCONTROLLER, PQFP100
封装： 14 X 14 MM, ROHS COMPLIANT, LQFP-100
文件页数： 149/163页
文件大小： 2275K
代理商： STM32F207VCT7TR
Electrical characteristics
STM32F205xx, STM32F207xx
86/163
Doc ID 15818 Rev 7
Table 35.
Flash memory endurance and data retention
5.3.13
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
●
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
●
FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS
through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant
with the IEC 61000-4-4 standard.
Table 34.
Flash memory programming with VPP
(1)
1.
TBD stands for “to be defined”.
Symbol
Parameter
Conditions
Min(2)
Typ
Max(2)
2.
Guaranteed by design, not tested in production.
Unit
tprog
Double word programming
TA = 0 to +40 °C
-
16
100(3)
3.
The maximum programming time is measured after 100K erase operations.
s
tERASE16KB Sector (16 KB) erase time
-
TBD
-
tERASE64KB Sector (64 KB) erase time
-
TBD
-
tERASE128KB Sector (128 KB) erase time
-
TBD
-
tME
Mass erase time
-
6.8
-
Vprog
Programming voltage
2.7
-
3.6
V
VPP
VPP voltage range
7
-
9
V
IPP
Minimum current sunk on
the VPP pin
10
-
mA
tVPP
(4)
4.
VPP should only be connected during programming/erasing.
Cumulative time during
which VPP is applied
-
1
hour
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1.
Based on characterization, not tested in production.
NEND
Endurance
TA = –40 to +85 °C (6 suffix versions)
TA = –40 to +105 °C (7 suffix versions)
10
kcycles
tRET
Data retention
1 kcycle(2) at TA = 85 °C
2.
Cycling performed over the whole temperature range.
30
Years
1 kcycle(2) at TA = 105 °C
10
10 kcycles(2) at TA = 55 °C
20
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