参数资料
型号: STM32L152CBT6DTR
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 32-BIT, FLASH, 32 MHz, RISC MICROCONTROLLER, PQFP48
封装: 7 X 7 MM, 0.50 MM PITCH, ROHS COMPLIANT, LQFP-48
文件页数: 72/106页
文件大小: 1417K
代理商: STM32L152CBT6DTR
Electrical characteristics
STM32L151xx, STM32L152xx
Doc ID 17659 Rev 1
6.3.7
PLL characteristics
The parameters given in Table 29 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 9.
6.3.8
Memory characteristics
The characteristics are given at TA = -40 to 105 °C unless otherwise specified.
RAM memory
Table 30.
RAM and hardware registers
Flash memory
Table 29.
PLL characteristics
Symbol
Parameter
Value
Unit
Min
Typ
Max(1)
1.
Based on characterization, not tested in production.
fPLL_IN
PLL input clock(2)
2.
Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by fPLL_OUT.
224
MHz
PLL input clock duty cycle
TBD
%
fPLL_OUT
PLL multiplier output clock
2
32
MHz
tLOCK
PLL lock time
TBD
s
Jitter
Cycle-to-cycle jitter
TBD
ps
IDDA(PLL)
Current consumption on VDDA
TBD
A
IDD(PLL)
Current consumption on VDD
TBD
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode(1)
1.
Minimum supply voltage without losing data stored in RAM (in Stop mode or under Reset) or in hardware
registers (only in Stop mode). Guaranteed by characterization, not tested in production.
STOP mode (or RESET)
1.4
V
Table 31.
Flash memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max(1)
1.
Guaranteed by design, not tested in production.
Unit
VDD
Operating voltage
Read / Write / Erase
1.65
3.6
V
tprog
Programming time for
word or half-page
Erase word/half page
TBD
ms
Programmed word/half page
TBD
IDD
Supply current during
programming / erasing
TA = 25 °C, VDD = 3.0 V
TBD
mA
TA = 25 °C, VDD = 1.8 V
TBD
mA
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