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参数资料
| 型号： | STP50NE10L |
| 厂商： | 意法半导体 |
| 英文描述： | N - CHANNEL 100V - 0.020ohm - 50A TO-220 STripFET POWER MOSFET |
| 中文描述： | ? - 100V的通道- 0.020ohm - 50A至- 220 STripFET功率MOSFET |
| 文件页数： | 3/8页 |
| 文件大小： | 86K |
| 代理商： | STP50NE10L |
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay T ime
Rise Time
VDD =50 V
ID =25 A
RG =4.7
VGS =5 V
(Resistive Load, see fig. 3)
30
105
ns
Qg
Q gs
Qgd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
VDD =80 V ID =50 A VGS =5 V
82
17
49
105
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay T ime
Fall T ime
VDD =50 V
ID =25 A
RG =4.7
VGS =5 V
(Resistive Load, see fig. 3)
135
45
ns
tr(Voff)
tf
tc
Off -volt age Rise T ime
Fall T ime
Cross-over Time
Vclamp =80 V
ID =50 A
RG =
4.7
V GS =5 V
(Induct ive Load, see fig. 5)
45
85
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
ISD
ISDM (
)
Source-drain Current
(pulsed)
50
200
A
VSD (
)Forward On Voltage
ISD =50 A
VGS =0
1. 5
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 30 A
di/dt = 100 A/
s
VDD =50 V
Tj =150
oC
(see t est circuit, f ig. 5)
165
870
10.5
ns
nC
A
(
) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STP50NE10L
3/8
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