参数资料
型号: STP5NK65Z
厂商: 意法半导体
英文描述: JFET; Breakdown Voltage, V(br)gss:-25V; Zero Gate Voltage Drain Current Min, Idss:100mA; Gate-Source Cutoff Voltage Max, Vgs(off):-9V; Continuous Drain Current, Id:100mA; Current Rating:100mA; Gate-Source Breakdown Voltage:-25V RoHS Compliant: No
中文描述: N沟道?650V - 1.5ohm - 5A至- 220齐纳保护SuperMESH⑩功率MOSFET
文件页数: 1/9页
文件大小: 286K
代理商: STP5NK65Z
1/9
April 2002
STP5NK65Z
N-CHANNEL 650V - 1.5
- 5A TO-220
Zener-Protected SuperMESHPower MOSFET
s
TYPICAL RDS(on) = 1.5
s
EXTREMELY HIGH dv/dt CAPABILITY
s
IMPROVED ESD CAPABILITY
s
100% AVALANCHE RATED
s
GATE CHARGE MINIMIZED
s
VERY LOW INTRINSIC CAPACITANCES
s
VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh products.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
ORDERING INFORMATION
TYPE
VDSS
RDS(on)
ID
Pw
STP5NK65Z
650 V
< 1.8
5 A
85 W
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP5NK65Z
P5NK65Z
TO-220
TUBE
TO-220
INTERNAL SCHEMATIC DIAGRAM
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相关代理商/技术参数
参数描述
STP5NK65ZFP 功能描述:MOSFET N-Channel 650V Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
STP5NK80 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 800V - 1.9ohm - 4.3A TO-220/TO-220FP Zener-Protected SuperMESH⑩Power MOSFET
STP5NK80Z 功能描述:MOSFET N-Ch 800 Volt 4.3 A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
STP5NK80ZFP 功能描述:MOSFET N-Ch 800 Volt 4.3 A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
STP5NK80ZFP 制造商:STMicroelectronics 功能描述:MOSFET N TO-220FP