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参数资料
| 型号： | STP5NK65Z |
| 厂商： | 意法半导体 |
| 英文描述： | JFET; Breakdown Voltage, V(br)gss:-25V; Zero Gate Voltage Drain Current Min, Idss:100mA; Gate-Source Cutoff Voltage Max, Vgs(off):-9V; Continuous Drain Current, Id:100mA; Current Rating:100mA; Gate-Source Breakdown Voltage:-25V RoHS Compliant: No |
| 中文描述： | N沟道?650V - 1.5ohm - 5A至- 220齐纳保护SuperMESH⑩功率MOSFET |
| 文件页数： | 9/9页 |
| 文件大小： | 286K |
| 代理商： | STP5NK65Z |
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STP5NK65Z
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STP5NK65ZFP | 功能描述:MOSFET N-Channel 650V Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STP5NK80 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 800V - 1.9ohm - 4.3A TO-220/TO-220FP Zener-Protected SuperMESH⑩Power MOSFET |
| STP5NK80Z | 功能描述:MOSFET N-Ch 800 Volt 4.3 A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STP5NK80ZFP | 功能描述:MOSFET N-Ch 800 Volt 4.3 A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STP5NK80ZFP | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220FP |
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