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参数资料
| 型号： | STP5NB100FP |
| 厂商： | 意法半导体 |
| 英文描述： | JFET; Breakdown Voltage, V(br)gss:-40V; Zero Gate Voltage Drain Current Min, Idss:50mA; Zero Gate Voltage Drain Current Max, Idss:50mA; Gate-Source Cutoff Voltage Max, Vgs(off):-10V; Leaded Process Compatible:No RoHS Compliant: No |
| 中文描述： | ? -频道1000V - 2.4ohm - 5A条- TO-220/TO-220FP PowerMESH MOSFET的 |
| 文件页数： | 1/9页 |
| 文件大小： | 106K |
| 代理商： | STP5NB100FP |
STP5NB100
STP5NB100FP
N - CHANNEL 1000V - 2.4
- 5A - TO-220/TO-220FP
PowerMESH
MOSFET
ν
TYPICAL RDS(on) = 2.4
ν
EXTREMELY HIGH dv/dt CAPABILITY
ν
100% AVALANCHE TESTED
ν
VERY LOW INTRINSIC CAPACITANCES
ν
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family
of
power
MOSFETs
with
outstanding performances.
The
new
patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
ν
HIGH CURRENT, HIGH SPEED SWITCHING
ν
SWITCH MODE POWER SUPPLIES (SMPS)
ν
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
February 2000
TO-220
TO-220FP
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Uni t
ST P5NB100
STP5NB100FP
VDS
Drain-source Voltage (VGS =0)
1000
V
VDGR
Drain- gate Voltage (RGS =20 k
)
1000
V
VGS
G ate-source Voltage
± 30
V
ID
Drain Current (continuous) at Tc =25
oC
5
5(*)
A
ID
Drain Current (continuous) at Tc =100
oC
3.1
3.1(*)
A
IDM(
)
Drain Current (pulsed)
15.2
15. 2
A
Ptot
T otal Dissipat ion at Tc =25
oC
135
40
W
Derat ing Factor
1.08
0.32
W/
oC
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V/ ns
VISO
I nsulat ion W ithst and Voltage (DC)
2000
V
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max. Operat ing Junction Temperature
150
oC
(
) Pulse width limited by safe operating area
(1)ISD
≤ 5 A, di/dt ≤ 200 A/s, VDD ≤ V(BR)DSS,Tj ≤ TJMAX
(*) Limited only by maximum temperature allowed
T YPE
VDSS
RDS(on)
ID
STP5NB100
STP5NB100F P
1000 V
<2.7
<2.7
5A
1/9
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|---|---|
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STP5NB40 | 功能描述:MOSFET N-Ch 400 Volt 5 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STP5NB40FP | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
| STP5NB60 | 功能描述:MOSFET RO 511-STP4NK60Z RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STP5NB60FP | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET |
| STP5NB80 | 功能描述:MOSFET RO 511-STP5NK80Z RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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