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参数资料
| 型号： | STP5NB100FP |
| 厂商： | 意法半导体 |
| 英文描述： | JFET; Breakdown Voltage, V(br)gss:-40V; Zero Gate Voltage Drain Current Min, Idss:50mA; Zero Gate Voltage Drain Current Max, Idss:50mA; Gate-Source Cutoff Voltage Max, Vgs(off):-10V; Leaded Process Compatible:No RoHS Compliant: No |
| 中文描述： | ? -频道1000V - 2.4ohm - 5A条- TO-220/TO-220FP PowerMESH MOSFET的 |
| 文件页数： | 2/9页 |
| 文件大小： | 106K |
| 代理商： | STP5NB100FP |
THERMAL DATA
TO-220
TO-220F P
Rthj-ca se
Thermal Resistance Junction-case
Max
0.93
3. 12
oC/W
Rthj-a mb
Rthc -sin k
Tl
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead T emperature F or Soldering Purpose
62.5
0.5
300
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Valu e
Uni t
IAR
Avalanche Current, Repet itive or Not -Repet itive
(pulse widt h limited by Tj max)
5A
EAS
Single Pulse Avalanche Energy
(starting Tj =25
oC, I
D =IAR,VDD =5 0 V)
220
mJ
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symbo l
Parameter
Test Cond iti ons
Mi n.
Typ .
Max.
Un it
V(BR)DSS
Drain-source
Breakdown Voltage
ID =250
AVGS =0
1000
V
IDSS
Zero Gate Voltage
Drain Current (VGS =0)
VDS = Max Rating
Tc =125
oC
1
50
A
IGSS
Gat e-body Leakage
Current (VDS =0)
VGS =
± 30 V
± 100
nA
ON (
)
Symbo l
Parameter
Test Cond iti ons
Mi n.
Typ .
Max.
Un it
VGS(th )
Gat e T hreshold
Voltage
VDS =VGS
ID =250
A
3
45V
RDS(on )
Static Drain-source On
Resistance
VGS =10 V
ID = 2.5 A
2.4
2.7
ID(on)
On Stat e Drain Current
VDS >ID(on ) xRDS(on )max
VGS =10 V
5A
DYNAMIC
Symbo l
Parameter
Test Cond iti ons
Mi n.
Typ .
Max.
Un it
gfs (
)Forward
Transconductance
VDS >ID(on ) xRDS(on )max
ID = 2.5 A
1. 5
S
Cis s
Cos s
Crs s
Input Capacitance
Out put Capacitance
Reverse Tr ansf er
Capacit ance
VDS = 25V
f = 1MHz
VGS = 0
1500
150
17
pF
STP5NB100/STP5NB100FP
2/9
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STP5NB40 | 功能描述:MOSFET N-Ch 400 Volt 5 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STP5NB40FP | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
| STP5NB60 | 功能描述:MOSFET RO 511-STP4NK60Z RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STP5NB60FP | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET |
| STP5NB80 | 功能描述:MOSFET RO 511-STP5NK80Z RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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