参数资料
型号: STR910FAM42X6T
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 32-BIT, FLASH, 96 MHz, RISC MICROCONTROLLER, QFP80
封装: LQFP-80
文件页数: 69/100页
文件大小: 1801K
代理商: STR910FAM42X6T
Electrical characteristics
STR91xFAxxx
7.9
EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
7.9.1
Functional EMS (electro magnetic susceptibility)
Based on a simple running application on the product (toggling 2 LEDs through I/O ports),
the product is stressed by two electro magnetic events until a failure occurs (indicated by the
LEDs).
ESD: Electro-Static Discharge (positive and negative) is applied on all pins of the
device until a functional disturbance occurs. This test conforms with the IEC 1000-4-2
standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD, VDDQ
and VSS through a 100pF capacitor, until a functional disturbance occurs. This test
conforms with the IEC 1000-4-4 standard.
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
Table 26.
Flash memory endurance
Parameter
Test conditions
Value
Unit
Min
Typ
Max
Program/erase cycles
Per word
100K
cycles
Data retention
20
years
Table 27.
EMS data
Symbol
Parameter
Conditions
Severity/
Criteria(1)
Unit
VFESD
Voltage limits to be applied on
any I/O pin to induce a functional
disturbance
VDD=1.8V, VDDQ=3.3V, TA=+25°C,
fOSC/fCPUCLK =4 MHz/96MHz PLL
1B
kV
VFFTB
Fast transient voltage burst limits
to be applied through 100pF on
VDD and VDDQ pins to induce a
functional disturbance
VDD=1.8V, VDDQ=3.3V, TA=+25°C,
fOSC/fCPUCLK =4 MHz/96 MHz PLL
conforms to IEC 1000-4-4
4A
1.
Data based on characterization results, not tested in production.
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