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参数资料
| 型号： | STR910FAM42X6T |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 32-BIT, FLASH, 96 MHz, RISC MICROCONTROLLER, QFP80 |
| 封装： | LQFP-80 |
| 文件页数： | 70/100页 |
| 文件大小： | 1801K |
| 代理商： | STR910FAM42X6T |
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STR91xFAxxx
Electrical characteristics
71/103
7.9.2
Electro magnetic interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm SAE J 1752/3 which specifies the board and the loading of each pin.
7.9.3
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
7.9.4
Electro-static discharge (ESD)
Electro-Static Discharges (3 positive then 3 negative pulses separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test
conforms to the JESD22-A114A/A115A standard. For more details, refer to the application
note AN1181.
Table 28.
EMI data
Symbol
Parameter
Conditions
Monitored
Frequency Band
Max vs.
[fOSC/fCPUCLK]
Unit
24 MHz /
48 MHz(1)
24 MHz /
96 MHz(1)
SEMI
Peak level
VDDQ=3.3V, VDD=1.8V,
TA=+25°C,
LQFP128 package(2)
conforming to SAE J
1752/3
0.1MHz to 30 MHz
14
10
dB
μV
30 MHz to 130
MHz
18
19
130 MHz to 1GHz
18
22
SAE EMI Level
4
-
1.
Data based on characterization results, not tested in production.
2.
BGA and LQFP devices have similar EMI characteristics.
Table 29.
ESD data
Symbol
Ratings
Conditions
Class
Maximum
value (1)
Unit
VESD(HBM)
Electro-static discharge voltage
(Human Body Model)
TA=+25°C
conforming to
JESD22-A114
2
+/-2000
V
VESD(CDM)
Electro-static discharge voltage
(Charged Device Model)
TA=+25°C
conforming to
JESD22-C101
II
1000
1.
Data based on characterization results, not tested in production.
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