参数资料
型号: STTH102RL
厂商: STMICROELECTRONICS
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
封装: PLASTIC PACKAGE-2
文件页数: 1/7页
文件大小: 107K
代理商: STTH102RL
November 2006
Rev 5
1/7
7
STTH102
High efficiency ultrafast diode
Main product characteristics
Features and benefits
Very low conduction losses
Negligible switching losses
Low forward and reverse recovery times
High junction temperature
Description
The STTH102, which is using ST’s new 200 V
planar technology, is specially suited for switching
mode base drive and transistor circuits. The
device is also intended for use as a free wheeling
diode in power supplies and other power
switching applications.
Order codes
IF(AV)
1 A
VRRM
200 V
Tj (max)
175° C
VF(max)
0.78 V
trr (max)
20 ns
Part Number
Marking
STTH102A
U12
STTH102
STTH102RL
STTH102
K
A
K
A
SMA
(JEDEC DO-214AC)
STTH102A
DO-41
STTH102
Table 1.
Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
200
V
IF(AV)
Average forward current
SMA
TL = 148° C δ = 0.5
1A
DO-41
TL = 130° C δ = 0.5
IFSM
Surge non repetitive forward
current
SMA
tp = 10 ms Sinusoidal
40
A
DO-41
50
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature
175
°C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
相关PDF资料
PDF描述
STTH12002TV1 60 A, 200 V, SILICON, RECTIFIER DIODE
STTH12010TV2 60 A, 1000 V, SILICON, RECTIFIER DIODE
STTH12012TV1 60 A, 1200 V, SILICON, RECTIFIER DIODE
STTH1210DI 12 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AC
STTH1210G-TR 12 A, 1000 V, SILICON, RECTIFIER DIODE
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