- 您现在的位置：买卖IC网 > PDF目录40411 > STTH102RL (STMICROELECTRONICS) 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 PDF资料下载
参数资料
| 型号： | STTH102RL |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 2/7页 |
| 文件大小： | 107K |
| 代理商： | STTH102RL |
Characteristics
STTH102
2/7
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.65 x IF(AV) + 0.130 IF
2
(RMS)
Table 2.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-l)
Junction to lead
SMA
30
°C/W
Lead length = 10 mm
DO-41
50
Table 3.
Static Electrical Characteristics
Symbol
Parameter
Tests conditions
Min.
Typ
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25° C
VR = VRRM
1
A
Tj = 125° C
1
25
VF
(2)
Forward voltage drop
Tj = 25° C
IF = 700 mA
(SMA)
0.90
V
IF = 1 A
0.97
Tj = 125° C
IF = 1 A
0.68
0.78
1.
Pulse test: tp = 5 ms, δ < 2%
2.
Pulse test: tp = 380 s, δ < 2%
Table 4.
Dynamic electrical characteristics
Symbol
Parameter
Tests conditions
Min
Typ
Max
Unit
trr
Reverse recovery time
Tj = 25° C
IF = 0.5 A Irr = 0.25 A
IR = 1 A
12
20
ns
tfr
Forward recovery time
Tj = 25° C
IF = 1 A dIF/dt = 50 A/ms
VFR = 1.1 x VFmax
50
ns
VFP
Forward recovery voltage
Tj = 25° C
IF = 1 A dIF/dt = 50 A/ms
1.8
V
Figure 1.
Average forward power dissipation
versus average forward current
(SMA)
Figure 2.
Average forward power dissipation
versus average forward current
(DO-41)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
P
(W)
F(AV)
I
(A)
F(AV)
T
δ=tp/T
tp
δ = 1
δ = 0.5
δ = 0.05 δ = 0.1
δ = 0.2
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.00
0.25
0.50
0.75
1.00
1.25
P
(W)
F(AV)
I
(A)
F(AV)
T
δ=tp/T
tp
δ = 1
δ = 0.5
δ = 0.05 δ
= 0.1
δ = 0.2
相关PDF资料 |
PDF描述 |
|---|---|
| STTH12002TV1 | 60 A, 200 V, SILICON, RECTIFIER DIODE |
| STTH12010TV2 | 60 A, 1000 V, SILICON, RECTIFIER DIODE |
| STTH12012TV1 | 60 A, 1200 V, SILICON, RECTIFIER DIODE |
| STTH1210DI | 12 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AC |
| STTH1210G-TR | 12 A, 1000 V, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| STTH102-Y | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Automotive high efficiency ultrafast diode |
| STTH106 | 功能描述:整流器 RO 511-STTH1R06 2/05 RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| STTH106RL | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER |
| STTH108 | 功能描述:整流器 1.0 Amp 800 Volt RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| STTH108_09 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:High voltage ultrafast rectifier |
发布紧急采购，3分钟左右您将得到回复。