参数资料
型号: STTH5R06G
厂商: STMICROELECTRONICS
元件分类: 整流器
英文描述: 5 A, 600 V, SILICON, RECTIFIER DIODE
封装: PLASTIC, DPAK-3
文件页数: 2/8页
文件大小: 96K
代理商: STTH5R06G
STTH5R06D/FP/B/G
2/8
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
IR
Reverse leakage
current
VR = 600V
Tj = 25
°C20
A
Tj = 125
°C
25
250
VF
Forward voltage drop
IF =5 A
Tj = 25
°C
2.9
V
Tj = 125
°C
1.4
1.8
To evaluate the maximum conduction losses use the following equation :
P = 1.16 x IF(AV) + 0.128 IF
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case
TO-220AC / DPAK / D PAK
3.0
°C/W
TO-220FPAC
5.5
THERMAL RESISTANCES
Symbol
Tests conditions
Min.
Typ.
Max.
Unit
trr
IF = 0.5 A Irr = 0.25 A IR =1A
Tj = 25
°C25
ns
IF =1 A dIF/dt = - 50 A/
s
VR = 30V
40
IRM
VR = 400 V IF =5A
dIF/dt = - 200A/
s
Tj = 125
°C
5.0
6.0
A
S factor
0.35
Qrr
110
nC
tfr
IF =5 A
dIF/dt = 40 A/
s
VFR = 1.1 x VFmax
Tj = 25
°C
150
ns
VFP
4.5
V
DYNAMIC ELECTRICAL CHARACTERISTICS
0
1
2
3
4
5
6
7
8
9
10
11
12
13
0
123456
7
IF(av)(A)
P(W)
T
δ=tp/T
tp
δ = 0.05 δ = 0.1
δ = 0.2
δ = 0.5
δ =1
Fig. 1: Conduction losses versus average current.
0
5
10
15
20
25
30
35
40
45
50
01
2
3456
VFM(V)
Tj=25
°C
(Maximum values)
Tj=125
°C
(Maximum values)
Tj=125
°C
(Maximum values)
Tj=125
°C
(Typical values)
Tj=125
°C
(Typical values)
IFM(A)
Fig. 2: Forward voltage drop versus forward
current
.
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