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参数资料
| 型号： | SUP75N03-04-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 30V TO220AB |
| 标准包装： | 500 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4 毫欧 @ 75A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 250nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 10742pF @ 25V |
| 功率 - 最大： | 3.7W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 带卷 (TR) |
SUP/SUB75N03-04
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ a
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V (BR)DSS
V GS(th)
I GSS
V GS = 0 V, I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
30
1
3
± 500
V
nA
V DS = 30 V, V GS = 0 V
1
Zero Gate Voltage Drain Current
I DSS
V DS = 30 V, V GS = 0 V, T J = 125 °C
50
μA
V DS = 30 V, V GS = 0 V, T J = 175 °C
200
On-State Drain Current b
I D(on)
V DS = 5 V, V GS = 10 V
V GS = 10 V, I D = 75 A
120
0.0034
0.004
A
Drain-Source On-State Resistance b
r DS(on)
V GS = 4.5 V, I D = 75 A
V GS = 10 V, I D = 25 A, T J = 125 °C
0.005
0.006
0.006
Ω
V GS = 10 V, I D = 25 A, T J = 175 °C
0.008
Forward
Transconductance b
g fs
V DS = 15 V, I D = 25 A
30
S
Dynamic
Input Capacitance
C iss
10742
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C oss
C rss
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
V GS = 0 V, V DS = 25 V, f = 1 MHz
V DS = 30 V, V GS = 10 V, I D = 75 A
V DD = 30 V, R L = 0.6 Ω
I D ? 50 A, V GEN = 10 V, R G = 2.5 Ω
1811
775
200
40
40
20
40
190
95
250
40
pF
nC
ns
Source-Drain Diode Ratings and Characteristics
Diode Forward Voltage b
Reverse Recovery Time
V SD
t rr
I F = 75 A, V GS = 0 V
70
1.3
120
V
ns
Peak Reverse Recovery Current
Reverse Recovery Charge
I RM(rec)
Q rr
I F = 50 A, di/dt = 100 A/μs
2.8
0.1
6
0.36
A
μC
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70745
S-62484-Rev. F, 04-Dec-06
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