参数资料
型号: SUP75P03-07-E3
厂商: Vishay Siliconix
文件页数: 2/7页
文件大小: 0K
描述: MOSFET P-CH D-S 30V TO220AB
标准包装: 500
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 75A
开态Rds(最大)@ Id, Vgs @ 25° C: 7 毫欧 @ 30A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 240nC @ 10V
输入电容 (Ciss) @ Vds: 9000pF @ 25V
功率 - 最大: 3.75W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
SUB75P03-07, SUP75P03-07
Vishay Siliconix
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V DS
V GS(th)
I GSS
V GS = 0 V, I D = - 250 μA
V DS = V GS , I D = - 250 μA
V DS = 0 V, V GS = ± 20 V
- 30
-1
-3
± 100
V
nA
V DS = - 30 V, V GS = 0 V
-1
Zero Gate Voltage Drain Current
I DSS
V DS = - 30 V, V GS = 0 V, T J = 125 °C
- 50
μA
V DS = - 30 V, V GS = 0 V, T J = 175 °C
- 250
On-State Drain Current a
I D(on)
V DS = - ? 5 V, V GS = - 10 V
V GS = - 10 V, I D = - 30 A
- 120
0.0055
0.007
A
Forward Transconductance
Drain-Source On-State Resistance a
a
R DS(on)
g fs
V GS = - 10 V, I D = - 30 A, T J = 125 °C
V GS = - 10 V, I D = - 30 A, T J = 175 °C
V GS = - 4.5 V, I D = - 20 A
V DS = - 15 V, I D = - 75 A
20
0.008
0.010
0.013
0.010
?
S
Dynamic b
Input Capacitance
C iss
9000
Gate-Drain Charge
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge c
Gate-Source Charge c
c
Turn-On Delay Time c
C oss
C rss
Q g
Q gs
Q gd
t d(on)
V GS = 0 V, V DS = - 25 V, f = 1 MHz
V DS = - 15 V, V GS = - 10 V, I D = - 75 A
1565
715
160
32
30
25
240
40
pF
nC
Rise Time c
Turn-Off Delay Time c
Fall Time c
t r
t d(off)
t f
V DD = - 15 V, R L = 0.2 ?
I D ? - 75 A, V GEN = - 10 V, R g = 2.5 ?
225
150
210
360
240
340
ns
Source-Drain Diode Ratings and
Characteristics b
(T C = 25 °C)
Continuous Current
Pulsed Current
I S
I SM
- 75
- 240
A
Forward Voltage a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
V SD
t rr
I RM(REC)
Q rr
I F = - 75 A, V GS = 0 V
I F = - 75 A, dI/dt = 100 A/μs
- 1.2
55
2.5
0.07
- 1.5
100
5
0.25
V
ns
A
μC
Notes:
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71109
S10-2429-Rev. E, 25-Oct-10
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