参数资料
型号: T435-800H
厂商: STMICROELECTRONICS
元件分类: 晶闸管
英文描述: 800 V, 4 A, SNUBBERLESS TRIAC
封装: IPAK-3
文件页数: 3/10页
文件大小: 113K
代理商: T435-800H
T4 Series
2/10
Table 3: Absolute Maximum Ratings
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current (full sine
wave)
IPAK/DPAK/
TO-220AB
Tc = 110°C
4A
ISOWATT220AB Tc = 105°C
ITSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
F = 50 Hz
t = 20 ms
30
A
F = 60 Hz
t = 16.7 ms
31
ItIt Value for fusing
tp = 10 ms
5.1
As
dI/dt
Critical rate of rise of on-state cur-
rent IG = 2 x IGT , tr ≤ 100 ns
F = 120 Hz
Tj = 125°C
50
A/s
IGM
Peak gate current
tp = 20 s
Tj = 125°C
4A
PG(AV)
Average gate power dissipation
Tj = 125°C
1W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Symbol
Test Conditions
Quadrant
T4
Unit
T405
T410
T435
IGT (1)
VD = 12 V RL = 30
I - II - III
MAX.
5
10
35
mA
VGT
I - II - III
MAX.
1.3
V
VGD
VD = VDRM RL = 3.3 k
Tj = 125°C
I - II - III
MIN.
0.2
V
IH (2)
IT = 100 mA
MAX.
10
15
35
mA
IL
IG = 1.2 IGT
I - III
MAX.
10
25
50
mA
II
15
30
60
dV/dt (2)
VD = 67 %VDRM gate open
Tj = 125°C
MIN.
20
40
400
V/s
(dI/dt)c (2)
(dV/dt)c = 0.1 V/s
Tj = 125°C
MIN.
1.8
2.7
-
A/ms
(dV/dt)c = 10 V/s
Tj = 125°C
0.9
2.0
-
Without snubber
Tj = 125°C
--
2.5
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1.
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