参数资料
型号: T435-800H
厂商: STMICROELECTRONICS
元件分类: 晶闸管
英文描述: 800 V, 4 A, SNUBBERLESS TRIAC
封装: IPAK-3
文件页数: 6/10页
文件大小: 113K
代理商: T435-800H
T4 Series
5/10
Figure 7: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width tp < 10 ms
and corresponding value of I2t
Figure 8: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
Figure 9: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values)
Figure 10: Relative variation of critical rate of
decrease of main current versus junction
temperature
Figure 11: DPAK thermal resistance junction to
ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35 m)
0.01
0.10
1.00
10.00
1
10
100
500
I
(A), I t (A s)
TSM
22
t (ms)
p
T initial=25°C
j
ITSM
dI/dt limitation:
50A/s
I t
2
-40
-20
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
T (°C)
j
I,I ,I [T ] /
GT H L
j
I
,I ,I [T =25°C]
GT H L
j
IGT
IH & IL
0.1
1.0
10.0
100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
(dV/dt)c (V/s)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
T405
T435
T410
0
25
50
75
100
125
0
1
2
3
4
5
6
(dI/dt)c [T ] /
pecified]
j
(dI/dt)c [T s
j
T (°C)
j
0
4
8
1216202428323640
0
10
20
30
40
50
60
70
80
90
100
S(cm)
R
(°C/W)
th(j-a)
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