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参数资料
| 型号： | T436416A-6SG |
| 厂商： | TM Technology, Inc. |
| 英文描述： | 4M X 16 SDRAM |
| 中文描述： | 4米× 16内存 |
| 文件页数： | 27/29页 |
| 文件大小： | 712K |
| 代理商： | T436416A-6SG |
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TE
CH
tm
Self Refresh Entry & Exit Cycle
0
1
2
T436416A
TM Technology Inc. reserves the right
P.27
to change products or specifications without notice.
Publication Date: MAY. 2003
Revision: B
C L O C K
C K E
C S
R A S
C A S
A D D R
B A
A 1 0 /A P
D Q
W E
D Q M
3
4
5
6
7
8
9
1 0
1 1
1 2
1 3
1 4
1 5
1 6
1 7
1 8
1 9
:D o n 't c a re
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
* N o te 2
* N o te 1
* N o te 3
* N o te 4
* N o te 6
* N o te 7
* N o te 5
t
S S
t
R C m in
H i-z
S e lf R e fre s h E n try
S e lf R e fre s h E x it
A u to R e fre sh
H i-z
*Note : TO ENTER SELF REFRESH MODE
1.
CS
,RAS &
CAS
with CKE should be low at the same clock cycle.
2. After 1 clock cycle, all the inputs inculding the system clock can be don’t care except for CKE.
3. The device remains in self refresh mode as long as CKE stays ‘Low’.
Cf.) Once the device enters self refresh mode, minimum
t
RAS
is required before exit from self refresh.
TO EXIT SELF REFRESH MODE
4. System clock restart and be stable before returning CKE high.
5.
CS
starts from high.
6. Minimum tRC is required after CKE going high to complete self refresh exit.
7. 2K cycle of burst auto refresh is required before self refresh entry and after self refresh exit if the
system uses burst refresh.
相关PDF资料 |
PDF描述 |
|---|---|
| T436416A-7.5S | 4M X 16 SDRAM |
| T436416A-7.5SG | 4M X 16 SDRAM |
| T436416A-7S | TERMINAL BLOCK END BARRIER IEC +OPTIONS |
| T436416A-7SG | 4M X 16 SDRAM |
| T436416A-8S | 4M X 16 SDRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| T436416A-7.5S | 制造商:TMT 制造商全称:TMT 功能描述:4M X 16 SDRAM |
| T436416A-7.5SG | 制造商:TMT 制造商全称:TMT 功能描述:4M X 16 SDRAM |
| T436416A-7S | 制造商:TMT 制造商全称:TMT 功能描述:4M X 16 SDRAM |
| T436416A-7SG | 制造商:TMT 制造商全称:TMT 功能描述:4M X 16 SDRAM |
| T436416A-8S | 制造商:TMT 制造商全称:TMT 功能描述:4M X 16 SDRAM |
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