参数资料
型号: T436432B-10S
厂商: TM Technology, Inc.
英文描述: 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
中文描述: 200万× 32内存为512k × 32 x 4Banks同步DRAM
文件页数: 20/72页
文件大小: 731K
代理商: T436432B-10S
TE
CH
tm
Timing Waveforms
T436432B
TM Technology Inc. reserves the right
P. 20
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
Figure 1. AC Parameters for Write Timing (Burst Length=4, CAS# Latency=2)
BS0,1
T0
T 1 T2
T3
T4
T5
T6
T7
T8
T9
T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
t
CH
t
CL
t
CK2
t
IS
t
IH
t
IS
Begin Bank A
Begin Bank B
t
IS
t
IH
t
IS
RBx
CAx
RBx
CBx
RAy
CAy
RAz
RBy
t
RCD
t
DAL
t
RC
t
IS
t
IH
t
WR
t
RP
t
RRD
Ax0 Ax1 Ax2
Ax3
Bx0
Bx1
Bx2
Bx3
Ay0
Ay1
Ay2
Ay3
Activate
Command
Bank A
Write with
AutoPrecharge
Command
Bank A
Activate
Command
Bank B
Write with
AutoPrecharge
Command
Bank B
Activate
Command
Bank A
Write
Command
Bank A
Precharge
Command
Bank A
Activate
Command
Bank A
Activate
Command
Bank B
CLK
CKE
CS#
RAS#
CAS#
WE#
ADDR.
DQM
DQ
Hi-Z
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