参数资料
型号: T436432B-10S
厂商: TM Technology, Inc.
英文描述: 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
中文描述: 200万× 32内存为512k × 32 x 4Banks同步DRAM
文件页数: 57/72页
文件大小: 731K
代理商: T436432B-10S
TE
CH
tm
T436432B
TM Technology Inc. reserves the right
P. 57
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
Figure 17.2. Auto Precharge after Write Burst (Burst Length=4, CAS# Latency=2)
T0
T 1 T2
T3
T4
T5
T6
T7
T8
T9
T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
A10
A0~A9
DQM
DQ
BS0,1
t
CK2
Activate
Command
Bank A
DBx0
DBx1DBx2 DBx3
DAy1DAy2
Hi-Z
Write
Command
Bank A
RAx
RAx
RBx
DAx0DAx1 DAx2 DAx3
DAy0
DAy3
DBy0
Activate
Command
Bank B
Activate
Command
Bank B
CBx
CAy
DBy1
DBy2 DBy3
High
Write with
Auto Precharge
Command
Bank B
Write with
Auto Precharge
Command
Bank A
Write with
Auto Precharge
Command
Bank B
RBy
CBy
RBy
DAz0 DAz1
Activate
Command
Bank A
Write with
Auto Precharge
Command
Bank A
DAz2 DAz3
CAx
RBx
CAz
RAz
RAz
WE#
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