参数资料
型号: T436432B-10S
厂商: TM Technology, Inc.
英文描述: 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
中文描述: 200万× 32内存为512k × 32 x 4Banks同步DRAM
文件页数: 65/72页
文件大小: 731K
代理商: T436432B-10S
TE
CH
tm
T436432B
TM Technology Inc. reserves the right
P. 65
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
Figure 20. Byte Write Operation (Burst Length=4, CAS# Latency=2)
T0
T 1 T2
T3
T4
T5
T6
T7
T8
T9
T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
A10
A0~A9
LDQM
UDQM
BS0,1
RAx
RAx
CAy
High
CAx
t
CK2
CAz
Activate
Bank A
CRead
Bank A
are masked
CWrite
Bank A
Upper 3 Bytes
are masked
Read
CBank A
Lower Byte
is masked
Lower Byte
is masked
Lower Byte
is masked
Ax0
Ax1
Ax2
Ax1
Ax2
Ax3
DAy1DAy2
DAy0 DAy1
DAy3
Az1
Az2
Az1
Az2
Az0
Az3
DQ0 - DQ7
DQ8 - DQ15
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