参数资料
| 型号： | T89C51CC01UA-SLSIM |
| 厂商： | Atmel |
| 文件页数： | 123/123页 |
| 文件大小： | 0K |
| 描述： | IC 8051 MCU FLASH 32K 44PLCC |
| 标准包装： | 27 |
| 系列： | AT89C CAN |
| 核心处理器： | 8051 |
| 芯体尺寸： | 8-位 |
| 速度： | 40MHz |
| 连通性： | CAN，UART/USART |
| 外围设备： | POR，PWM，WDT |
| 输入/输出数： | 32 |
| 程序存储器容量： | 32KB（32K x 8） |
| 程序存储器类型： | 闪存 |
| EEPROM 大小： | 2K x 8 |
| RAM 容量： | 1.25K x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 3 V ~ 5.5 V |
| 数据转换器： | A/D 8x10b |
| 振荡器型： | 外部 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 44-LCC（J 形引线） |
| 包装： | 管件 |
| 配用： | AT89STK-06-ND - KIT DEMOBOARD 8051 MCU W/CAN |
| 其它名称： | T89C51CC01UASLSIM |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页第86页第87页第88页第89页第90页第91页第92页第93页第94页第95页第96页第97页第98页第99页第100页第101页第102页第103页第104页第105页第106页第107页第108页第109页第110页第111页第112页第113页第114页第115页第116页第117页第118页第119页第120页第121页第122页当前第123页
2010 Microchip Technology Inc.
DS41303G-page 99
PIC18F2XK20/4XK20
7.0
DATA EEPROM MEMORY
The data EEPROM is a nonvolatile memory array, sep-
arate from the data RAM and program memory, which
is used for long-term storage of program data. It is not
directly mapped in either the register file or program
memory space but is indirectly addressed through the
Special Function Registers (SFRs). The EEPROM is
readable and writable during normal operation over the
entire VDD range.
Four SFRs are used to read and write to the data
EEPROM as well as the program memory. They are:
EECON1
EECON2
EEDATA
EEADR
EEADRH
The data EEPROM allows byte read and write. When
interfacing to the data memory block, EEDATA holds
the 8-bit data for read/write and the EEADR:EEADRH
register pair hold the address of the EEPROM location
being accessed.
The EEPROM data memory is rated for high erase/write
cycle endurance. A byte write automatically erases the
location and writes the new data (erase-before-write).
The write time is controlled by an on-chip timer; it will
vary with voltage and temperature as well as from chip-
to-chip. Please refer to parameter D122 (Table 26.10 in
limits.
7.1
EEADR and EEADRH Registers
The EEADR register is used to address the data
EEPROM for read and write operations. The 8-bit
range of the register can address a memory range of
256 bytes (00h to FFh). The EEADRH register expands
the range to 1024 bytes by adding an additional two
address bits.
7.2
EECON1 and EECON2 Registers
Access to the data EEPROM is controlled by two
registers: EECON1 and EECON2. These are the same
registers which control access to the program memory
and are used in a similar manner for the data
EEPROM.
The EECON1 register (Register 7-1) is the control reg-
ister for data and program memory access. Control bit
EEPGD determines if the access will be to program or
data EEPROM memory. When the EEPGD bit is clear,
operations will access the data EEPROM memory.
When the EEPGD bit is set, program memory is
accessed.
Control bit, CFGS, determines if the access will be to
the Configuration registers or to program memory/data
EEPROM memory. When the CFGS bit is set,
subsequent operations access Configuration registers.
When the CFGS bit is clear, the EEPGD bit selects
either program Flash or data EEPROM memory.
The WREN bit, when set, will allow a write operation.
On power-up, the WREN bit is clear.
The WRERR bit is set by hardware when the WR bit is
set and cleared when the internal programming timer
expires and the write operation is complete.
The WR control bit initiates write operations. The bit
can be set but not cleared by software. It is cleared only
by hardware at the completion of the write operation.
Control bits, RD and WR, start read and erase/write
operations, respectively. These bits are set by firmware
and cleared by hardware at the completion of the
operation.
The RD bit cannot be set when accessing program
memory (EEPGD = 1). Program memory is read using
table read instructions. See Section 6.1 “Table Reads
and Table Writes” regarding table reads.
The EECON2 register is not a physical register. It is
used exclusively in the memory write and erase
sequences. Reading EECON2 will read all ‘0’s.
Note:
During normal operation, the WRERR
may read as ‘1’. This can indicate that a
write operation was prematurely termi-
nated by a Reset, or a write operation was
attempted improperly.
Note:
The EEIF interrupt flag bit of the PIR2
register is set when the write is complete.
It must be cleared by software.
相关PDF资料 |
PDF描述 |
|---|---|
| T89C51CC01UA-RLTIM | IC 8051 MCU FLASH 32K 44VQFP |
| T89C51CC01CA-SLSIM | IC 8051 MCU FLASH 32K 44PLCC |
| T89C51CC01CA-RLTIM | IC 8051 MCU FLASH 32K 44VQFP |
| AT91M55800A-33CI | IC ARM MCU 33MHZ 176-BGA |
| 10FMN-BMTR-A-TB | CONN FMN HSNG 10POS SGL REV SMD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| T89C51CC02 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Enhanced 8-bit Microcontroller with CAN Controller and Flash |
| T89C51CC02_03 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:CAN Microcontrollers |
| T89C51CC02_0305 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Enhanced 8-bit Microcontroller with CAN Controller and Flash Memory |
| T89C51CC02_0312 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:CAN Microcontrollers |
| T89C51CC02_06 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Enhanced 8-bit Microcontroller with CAN Controller and Flash |
发布紧急采购，3分钟左右您将得到回复。