参数资料
型号: TBB1010
厂商: Renesas Technology Corp.
英文描述: Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
中文描述: 双内建偏置电路场效应晶体管集成电路甚高频/甚高频射频放大器
文件页数: 1/10页
文件大小: 80K
代理商: TBB1010
TBB1010
Twin Build in Biasing Circuit MOS FET IC
VHF/VHF RF Amplifier
ADE-208-1607B (Z)
3rd. Edition
Feb. 2003
Features
Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
High |yfs|=29mS ×2
Suitable for World Standard Tuner RF amplifier.
Very useful for total tuner cost reduction.
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,
Rs = 0 conditions.
Provide mini mold packages; CMPAK-6
Outline
CMPAK-6
3
1
6
4
1. Drain(1)
2. Source
3. Drain(2)
4. Gate-1(2)
5. Gate-2
6. Gate-1(1)
2
5
Notes:
1.
Marking is “KM”.
2.
TBB1010 is individual type number of HITACHI TWIN BBFET.
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