- 您现在的位置：买卖IC网 > PDF目录299956 > TBB1010 (Renesas Technology Corp.) Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier PDF资料下载
参数资料
| 型号： | TBB1010 |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier |
| 中文描述： | 双内建偏置电路场效应晶体管集成电路甚高频/甚高频射频放大器 |
| 文件页数： | 3/10页 |
| 文件大小： | 80K |
| 代理商： | TBB1010 |
TBB1010
Rev.2, Feb. 2003, page 2 of 10
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDS
6V
Gate1 to source voltage
VG1S
+6
-0
V
Gate2 to source voltage
VG2S
+6
-0
V
Drain current
ID
30
mA
Channel power dissipation
Pch
*3
250
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 3. Value on the glass epoxy board (50mm
× 40mm × 1mm).
相关PDF资料 |
PDF描述 |
|---|---|
| TBC8121-0112500 | SNAP ACTING/LIMIT SWITCH, MOMENTARY, 25A, 12VDC, PANEL MOUNT |
| TC-140-CBB-1PMA19.44-MHZ | TCXO, CLOCK, 19.44 MHz, TTL OUTPUT |
| TC-140-CBB-1PMA10.00-MHZ | TCXO, CLOCK, 10 MHz, TTL OUTPUT |
| TC-140-CBB-1PMAFREQ | TCXO, CLOCK, 0.5 MHz - 160 MHz, TTL OUTPUT |
| TC-140-BBB-207F20.00-MHZ | TCXO, CLOCK, 20 MHz, TTL OUTPUT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TBB1010_06 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier |
| TBB1010_11 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier |
| TBB1010KMTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier |
| TBB1010KMTL-H | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier |
| TBB1012 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
发布紧急采购，3分钟左右您将得到回复。