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参数资料
| 型号： | TBB1010 |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier |
| 中文描述： | 双内建偏置电路场效应晶体管集成电路甚高频/甚高频射频放大器 |
| 文件页数： | 6/10页 |
| 文件大小： | 80K |
| 代理商： | TBB1010 |
TBB1010
Rev.2, Feb. 2003, page 5 of 10
Equivalent Circuit
BBFET-(1)
BBFET-(2)
No.1
No.2
No.3
No.6
No.5
No.4
Drain(1)
Source
Drain(2)
Gate-1(1)
Gate-2
Gate-1(2)
200 MHz Power Gain, Noise Figure Test Circuit
VG2
Input (50
)
1000p
36p
1000p
L1
V = V
D
G1
R G
TWINBBFET
RFC
Output (50
)
L2
1000p
10p max
1000p
47k
1SV70
1000p
47k
120k
V T
Unit : Resistance
(
)
Capacitance (F)
1SV70
L1 :
φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 :
φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC :
φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TBB1010_06 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier |
| TBB1010_11 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier |
| TBB1010KMTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier |
| TBB1010KMTL-H | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier |
| TBB1012 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
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