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参数资料
| 型号： | TBB1010 |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier |
| 中文描述： | 双内建偏置电路场效应晶体管集成电路甚高频/甚高频射频放大器 |
| 文件页数： | 4/10页 |
| 文件大小： | 80K |
| 代理商： | TBB1010 |
TBB1010
Rev.2, Feb. 2003, page 3 of 10
Electrical Characteristics
(Ta = 25°C)
The below specification are applicable for FET1 and FET2 unit
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
6—
—
V
ID = 200
A, VG1S = VG2S = 0
Gate1 to source breakdown
voltage
V(BR)G1SS +6
—
V
IG1 = +10
A, VG2S = VDS = 0
Gate2 to source breakdown
voltage
V(BR)G2SS +6
—
V
IG2 = +10
A, VG1S = VDS = 0
Gate1 to source cutoff current
IG1SS
—
+100
nA
VG1S = +5 V, VG2S = VDS = 0
Gate2 to source cutoff current
IG2SS
—
+100
nA
VG2S = +5 V, VG1S = VDS = 0
Gate1 to source cutoff voltage
VG1S(off)
0.6
—
1.1
V
VDS = 5 V, VG2S = 4 V,
ID = 100
A
Gate2 to source cutoff voltage
VG2S(off)
0.6
—
1.1
V
VDS = 5 V, VG1S = 5 V,
ID = 100
A
Drain current
ID(op)
12
16
20
mA
VDS = 5 V, VG1 = 5 V
VG2S = 4 V, RG = 120 k
Forward transfer admittance
|yfs|24
29
—
mS
VDS = 5 V, VG1 = 5 V, VG2S =4V
RG = 120 k
, f = 1 kHz
Input capacitance
Ciss
1.7
2.1
2.5
pF
VDS = 5 V, VG1 = 5 V
Output capacitance
Coss
1.0
1.4
1.8
pF
VG2S =4 V, RG = 120 k
Reverse transfer capacitance
Crss
—
0.03
0.05
pF
f = 1 MHz
Power gain
PG
25
30
—
dB
VDS = VG1 = 5 V, VG2S = 4 V
Noise figure
NF
—
1.1
1.8
dB
RG = 120 k
, f = 200 MHz
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TBB1010_06 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier |
| TBB1010_11 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier |
| TBB1010KMTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier |
| TBB1010KMTL-H | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier |
| TBB1012 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
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