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2
SMBus Thermal Sensor with
External Diode Input
TC1068
TC1068-1 2/8/99
2001 Microchip Technology Inc. DS21352A
ABSOLUTE MAXIMUM RATINGS*
Power Supply Voltage (VDD) .........................................6V
Voltage On Any Pin ............ (GND – 0.3V) to (VDD + 0.3V)
Operating Temperature (TA) .................. –55°C to +125°C
Storage Temperature (TSTG) .................. –65°C to +150°C
SMBus Input/Output Current ................. –1 mA to +50 mA
D– Input Current ......................................................
±1 mA
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
DC ELECTRICAL CHARACTERISTICS: VDD = 3.3V, –55°C
≤ T
A ≤ 125°C, unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Power Supply
VDD
Power Supply Voltage
–55
≤ TA ≤ +125°C
3.0
—
5.5
V
VUV-LOCK
VDD Undervoltage
2.4
2.80
2.95
V
Lockout Threshold
VPOR
Power-On Reset Threshold
VDD Falling Edge
1.0
1.7
2.3
V
IDD
Operating Current
0.25 Conv./Sec Rate
—
70
A
SMBus Inactive (Note 1)
IDD
Operating Current
2 Conv./Sec Rate
—
180
A
SMBus Inactive (Note 1)
IDD-STANDBY Standby Supply Current
VDD = 3.3V SMBus Active
—
100
A
IDD-STANDBY Standby Supply Current
VDD = 3.3V, SMBus Inactive
—
10
A
IADD-BIAS
ADD[1:0] Bias Current
Power-Up Only
—
160
—
A
ALERT#/COMP# Output
VOL
Output Low Voltage
IOL = 1.0 mA (Note 3)
—
0.4
V
ADD[1:0]
VIL
Logic Input Low
—
VDD x 0.3
V
VIH
Logic Input High
VDD x 0.7
——
V
STBY# Input
VIL
Logic Input Low
—
VDD x .3
V
VIH
Logic Input High
VDD x .7
—
V
INT_SEL
VIL
Logic Input Low
—
VDD x .3
V
VIH
Logic Input High
VDD x .7
—
V
RP
Internal Pull-up Resistance
—
500
—
K
Temp-to-Bits Converter
TRES
Basic Temperature Resolution
—
1
—
°C
TIERR1
Internal Diode Temperature
+60
°C ≤ TA ≤ +100°C–2
—
+2
°C
0
°C ≤ TA ≤ +125°C–3
—
+3
°C
–55
°C ≤ TA < 0°C—
±3—
°C
TEERR
External Diode Temperature
+60
°C ≤ TA ≤ +100°C–3
—
+3
°C
(Note 4)
0
°C ≤ TA ≤ +125°C–5
—
+5
°C
–55
°C ≤ TA < 0°C—
±5—
°C